SCHEMBL12935548

SCHEMBL12935548

CCC(C)(C)C(=O)OC1C2CC3C1OC(=O)C3(C)C2C#N

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
▸ HMGCR P04035 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12935514 0.86 HMGCR (0.31) HMGCR
SCHEMBL14363816 0.85 HMGCR (0.36) HMGCR
SCHEMBL12935545 0.81 HMGCR (0.33) HMGCR
SCHEMBL10204906 0.81 HMGCR (0.34) HMGCR
SCHEMBL13899619 0.79 HMGCR (0.33) HMGCR
SCHEMBL17549974 0.76 — —
SCHEMBL25894223 0.76 HMGCR (0.30) HMGCR
SCHEMBL16328010 0.73 — —
SCHEMBL19058052 0.73 HMGCR (0.32) HMGCR
SCHEMBL107167 0.73 HMGCR (0.32) HMGCR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9012123-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-04-21 — — US disclosed
US-9012123-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-04-21 — — US disclosed
US-20130101936-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-25 — — US disclosed
US-20130101936-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-25 — — US disclosed
US-20110014571-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 — — US disclosed
US-20110014571-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 — — US disclosed
US-7771912-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-08-10 — — US disclosed
US-7771912-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-08-10 — — US disclosed
US-7687219-B2 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2010-03-30 — — US disclosed
US-7687219-B2 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2010-03-30 — — US disclosed
US-7442490-B2 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2008-10-28 — — US disclosed
US-20080044760-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2008-02-21 — — US disclosed
US-20070218405-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-09-20 — — US disclosed
US-20070218405-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-09-20 — — US disclosed
US-20070134589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-14 — — US disclosed
US-20070134589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-14 — — US disclosed
US-20070134590-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION. (JP) 2007-06-14 — — US disclosed
US-20070134590-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION. (JP) 2007-06-14 — — US disclosed
US-20070105045-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION 2007-05-10 — — US disclosed
US-20070105045-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION 2007-05-10 — — US disclosed
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