Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 3/20 | 0.46 |
| ▸ | HDAC3 | O15379 | 3/20 | 0.46 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.46 |
| ▸ | HDAC2 | Q92769 | 3/20 | 0.46 |
| ▸ | HDAC8 | Q9BY41 | 3/20 | 0.46 |
| ▸ | CES2 | O00748 | 2/20 | 0.43 |
| ▸ | CES1 | P23141 | 2/20 | 0.43 |
| ▸ | TSHR | P16473 | 3/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.41 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.41 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.41 |
| ▸ | CA2 | P00918 | 3/20 | 0.39 |
| ▸ | CA1 | P00915 | 2/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL1961778 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL17433598 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL30364223 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL192692 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL8586807 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL16909330 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL610851 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL1304414 | 0.95 | FFAR3 (0.50) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL17477084 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL17477093 | 0.95 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8053029-B2 | Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom | SAMSUNG SDI CO., LTD. (KR) | 2011-11-08 | — | — | US | claimed |
| US-20080012015-A1 | METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-17 | — | — | US | claimed |
| US-8053029-B2 | Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom | SAMSUNG SDI CO., LTD. (KR) | 2011-11-08 | — | — | US | disclosed |
| US-20080012015-A1 | METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-17 | — | — | US | disclosed |