SCHEMBL131027

SCHEMBL131027

[N-3].[N-3].[Sr+2].[Sr+2].[Sr+2]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4B

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15987353 0.82
SCHEMBL17240224 0.82
SCHEMBL18631600 0.82
SCHEMBL6925795 0.82
Methane SCHEMBL28146975 0.71
SCHEMBL28306989 0.71
SCHEMBL29538745 0.71
SCHEMBL12978591 0.71
SCHEMBL1536205 0.50
SCHEMBL35987 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1107 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260075905-A1 DEPOSITION OF N-METAL FILMS APPLIED MATERIALS, INC. (US) 2026-03-12 US claimed
US-20260060065-A1 SEMICONDUCTOR DEVICE INCLUDING INTERCONNECT STRUCTURE AND METHOD FOR MANUFACTURING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-02-26 US claimed
US-20250357124-A1 N-DIPOLE MATERIAL FOR STACKED TRANSISTORS TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
WO-2025096520-A1 NEUTRON GENERATION TARGET MATERIALS, CONFIGURATIONS AND METHODS FOR IMPROVED PROTECTION OF OBJECTIVE MATERIALS AND METHODS OF PRODUCING NEUTRONS WITH THE SAME TAE TECHNOLOGIES, INC. (US) 2025-05-08 WO claimed
US-20250126867-A1 INTERFACIAL LAYER SCALING PROCESSES FOR SEMICONDUCTOR DEVICES APPLIED MATERIALS, INC. (US) 2025-04-17 US claimed
CN-119776966-A Preparation method of alkaline earth metal atom intercalation doped fullerene molecule covalent polymer monocrystal 中国科学技术大学 2025-04-08 CN claimed
CN-113924656-B Integrated dipole flow of transistors 应用材料公司 2025-03-11 CN claimed
CN-119297195-A Negative electrode plate, preparation method thereof and all-solid-state battery 中科超能(深圳)新能源科技有限公司 2025-01-10 CN claimed
CN-117844033-A Preparation method of photovoltaic module and photovoltaic module 中天光伏材料有限公司 2024-04-09 CN claimed
US-11888045-B2 Integrated dipole flow for transistor APPLIED MATERIALS, INC. (US) 2024-01-30 US claimed
US-20040147656-A1 Emulsion composition, coating film formed therefrom, and cooling mechanism using the coating film CERAMISSION CO., LTD. (JP) 2004-07-29 US claimed
CN-1508172-A Emulsion formed artical and coating formed therefrom and cooling structure using said coating ������������ʽ���� 2004-06-30 CN claimed
WO-2003080892-A1 LOW CONTAMINATION COMPONENTS FOR SEMICONDUCTOR PROCESSING APPARATUS AND METHODS FOR MAKING COMPONENTS LAM RESEARCH CORPORATION (US) 2003-10-02 WO claimed
US-20030181065-A1 Low contamination components for semiconductor processing apparatus and methods for making components LAM RESEARCH CORPORATION 2003-09-25 US claimed
US-6518634-B1 Strontium nitride or strontium oxynitride gate dielectric MOTOROLA, INC. 2003-02-11 US claimed
US-6159436-A Conversion process for strontium sulfate in carbonate rich celestite ores to strontium carbonate using sodium carbonate in an air/vapor-lift loop reactor CENTRO DE INVESTIGACION Y DE ESTUDIOS AVANZADOS DEL I.P.N. (MX) 2000-12-12 US claimed
EP-0952131-A1 GAS-GENERATING AGENT FOR AIR BAG NIPPON KAYAKU KABUSHIKI KAISHA (JP) 1999-10-27 EP claimed
WO-1999020576-A1 METAL NITRIDES AS PERFORMANCE MODIFIERS FOR GLASS COMPOSITIONS LIBBEY-OWENS-FORD CO. (US) 1999-04-29 WO claimed
US-4923019-A Thermochemical penetrator for ice and frozen soils ARCTIC SYSTEMS LIMITED (CA) 1990-05-08 US claimed
US-4746636-A CONTAINING STRONIIUM, TUNGSTEN, RARE EARTH ELEMENT COMPONENT KYOCERA CORPORATION (JP) 1988-05-24 US claimed