⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19245757 | 0.86 | — | — | |
| SCHEMBL17853841 | 0.86 | — | — | |
| SCHEMBL13681840 | 0.83 | — | — | |
| SCHEMBL14274392 | 0.83 | — | — | |
| SCHEMBL13683730 | 0.83 | — | — | |
| SCHEMBL14509296 | 0.74 | — | — | |
| SCHEMBL15267975 | 0.73 | — | — | |
| SCHEMBL13305426 | 0.73 | — | — | |
| SCHEMBL2681346 | 0.73 | — | — | |
| SCHEMBL13118551 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11009793-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-05-18 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20170226252-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-10 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-24 | — | — | US | disclosed |
| US-8741538-B2 | Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-06-03 | — | — | US | disclosed |
| US-7807328-B2 | base resin comprises homo-/copolyenes having alkali soluble group, exhibits changed alkali solubility under action of acid, acid generator, and tertiary alkanolamines; for patterning semiconductor integrated circuit via lithography; improved resolution | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-10-05 | — | — | US | disclosed |
| US-20100151383-A1 | POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7700259-B2 | Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-20 | — | — | US | disclosed |
| US-7666572-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-23 | — | — | US | disclosed |
| US-7592122-B2 | Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-09-22 | — | — | US | disclosed |
| US-20070298355-A1 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-20070224520-A1 | Polymer Compound, Photoresist Composition Containing Such Polymer Compound, and Method for Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-09-27 | — | — | US | disclosed |
| US-20070172757-A1 | Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-07-26 | — | — | US | disclosed |