Butane

Butane

SCHEMBL1311231

CCCC.[SeH2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butane SCHEMBL2470336 0.91 TSHR (0.50)
Butane SCHEMBL9292387 0.91 TSHR (0.50)
Butane SCHEMBL3593 0.91
Butane SCHEMBL8628663 0.91 TSHR (0.50)
Butane SCHEMBL1734106 0.91
Butane SCHEMBL1003138 0.83 TSHR (0.44)
Butane SCHEMBL971491 0.83
Butane SCHEMBL622591 0.83
Butane SCHEMBL250788 0.83
Butane SCHEMBL7457770 0.83 TSHR (0.44)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260084141-A1 HYDROGENATION CATALYST AND PREPARATION METHOD THEREFOR AND USE THEREOF CHINA PETROLEUM & CHEM CORP (CN) 2026-03-26 US claimed
EP-4574256-A1 HYDROGENATION CATALYST AND PREPARATION METHOD THEREFOR AND USE THEREOF China Petroleum & Chemical Corporation (CN) 2025-06-25 EP claimed
CN-120138595-A P-type IIIA group metal oxide semiconductor film and preparation method thereof 香港科技大学(广州) 2025-06-13 CN claimed
WO-2024060582-A1 HYDROGENATION CATALYST AND PREPARATION METHOD THEREFOR AND USE THEREOF 中国石油化工股份有限公司 2024-03-28 WO claimed
CN-111785964-B Artificial two-dimensional solid electrolyte interface material of lithium metal battery, anode precursor material, anode, preparation and application thereof 中南大学 2024-03-22 CN claimed
CN-114790555-A Preparation method and application of selenium-doped porous carbon-based nitrogen reduction electrocatalyst 南开大学 2022-07-26 CN claimed
CN-114506824-A Zinc selenide sol and preparation method and application thereof 佛山市铁人环保科技有限公司 2022-05-17 CN claimed
CN-111785928-B Solid electrolyte interface material, negative electrode precursor material and negative electrode of lithium metal battery, and preparation and application thereof 中南大学 2021-11-16 CN claimed
US-8828769-B2 Energy conversion device UNIVERSITY OF CENTRAL FLORIDA (US) 2014-09-09 US claimed
US-8722451-B2 Solid state energy photovoltaic device UNIVERSITY OF CENTRAL FLORIDA 2014-05-13 US claimed
US-20110275174-A1 Solid state energy conversion device PARTIAL Assignment By Aravinda Kar To University of Central Floria (US) 2011-11-10 US claimed
US-20110272710-A1 Solid state energy photovoltaic device STATE OF FLORIDA (US) 2011-11-10 US claimed
EP-2356688-A1 ENERGY CONVERSION DEVICE University Of Central Florida (US) 2011-08-17 EP claimed
US-20110056542-A1 Energy conversion device University of Central Florida, State University of the State of Florida (US) 2011-03-10 US claimed
WO-2010138636-A2 SYNTHESIS OF MULTINARY CHALCOGENIDE NANOPARTICLES COMPRISING CU, ZN, SN, S, AND SE PURDUE RESEARCH FOUNDATION (US) 2010-12-02 WO claimed
WO-2010065099-A1 ENERGY CONVERSION DEVICE UNIVERSITY OF CENTRAL FLORIDA (US) 2010-06-10 WO claimed
US-7632701-B2 Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. (US) 2009-12-15 US claimed
US-20070257255-A1 THIN FILM SOLAR CELLS BY SELENIZATION SULFURIZATION USING DIETHYL SELENIUM AS A SELENIUM PRECURSOR ENERGY, UNITED STATES DEPARTMENT OF 2007-11-08 US claimed
EP-0317343-B1 Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, Te, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material CANON KK (JP) 1995-07-05 EP claimed
US-4859625-A Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd. (JP) 1989-08-22 US claimed