⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27028333 | 0.82 | — | — | |
| SCHEMBL4999963 | 0.77 | — | — | |
| SCHEMBL705100 | 0.77 | — | — | |
| SCHEMBL1067055 | 0.72 | — | — | |
| SCHEMBL1315986 | 0.71 | — | — | |
| SCHEMBL15915060 | 0.71 | TSHR (0.30) | — | |
| SCHEMBL1315715 | 0.69 | — | — | |
| SCHEMBL119152 | 0.67 | — | — | |
| SCHEMBL412701 | 0.67 | — | — | |
| SCHEMBL4999752 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240199913-A1 | METHOD FOR SUPPRESSING COLLAPSE OF THREE-DIMENSIONAL STRUCTURE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-06-20 | — | — | US | disclosed |
| CN-109071366-B | Surface applied corrosion inhibitor | 建筑研究和技术有限公司 | 2022-05-10 | — | — | CN | disclosed |
| US-8163950-B2 | Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110275849-A1 | PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES | BANNOU TADASHI | 2011-11-10 | — | — | US | disclosed |
| EP-1160848-B1 | Composition for silica-based film formation | JSR CORP (JP) | 2011-10-05 | — | — | EP | disclosed |
| US-8008521-B2 | Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes | HOKKO CHEMICAL INDUSTRY CO., LTD. (JP) | 2011-08-30 | — | — | US | disclosed |
| US-20090082585-A1 | PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES | BANNOU TADASHI | 2009-03-26 | — | — | US | disclosed |
| US-7459577-B2 | Reacting a chlorosilane with grignard reagent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-02 | — | — | US | disclosed |
| US-7413775-B2 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION (JP) | 2008-08-19 | — | — | US | disclosed |
| US-7160625-B2 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION (JP) | 2007-01-09 | — | — | US | disclosed |
| US-20060127683-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2006-06-15 | — | — | US | disclosed |
| US-20050070730-A1 | Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-03-31 | — | — | US | disclosed |
| US-20030180550-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2003-09-25 | — | — | US | disclosed |
| US-6503633-B2 | Semiconductors | JSR CORPORATION (JP) | 2003-01-07 | — | — | US | disclosed |
| US-20010055892-A1 | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2001-12-27 | — | — | US | disclosed |
| EP-1160848-A2 | Composition for silica-based film formation | JSR Corporation (JP) | 2001-12-05 | — | — | EP | disclosed |