SCHEMBL1319040

SCHEMBL1319040

CCCCCCCCCCCCNS(=O)(=O)C(F)(F)F

nearest known ligand 1.00 ✓ in ChEMBL — recovers established targets

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 3/20 1.00
PPARA Q07869 4/20 0.55
CA2 P00918 5/20 0.52
CA1 P00915 4/20 0.52
CA12 O43570 2/20 0.46
CA7 P43166 2/20 0.46
CA14 Q9ULX7 2/20 0.46
CA9 Q16790 1/20 0.43
RELA Q04206 4/20 0.41
FAAH O00519 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15116349 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL1320931 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL1318738 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL15116365 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL1319977 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL1319861 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL1318327 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL1321631 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL15116347 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12
SCHEMBL10029315 1.00 EPHX1 (1.00) EPHX1PPARACA2CA1CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20170184964-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184962-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-8980527-B2 Pattern forming process and resist compostion SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-8057981-B2 Resist composition, resist protective coating composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-15 US disclosed
US-7759047-B2 Resist protective film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-20 US disclosed
US-7670750-B2 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-20090208867-A1 Resist Composition, Resist Protective Coating Composition, and Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20080085466-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070275326-A1 Resist protective film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-29 US disclosed