⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9146043 | 1.00 | — | — | |
| SCHEMBL28236421 | 1.00 | — | — | |
| SCHEMBL27844513 | 1.00 | — | — | |
| SCHEMBL28591131 | 1.00 | — | — | |
| SCHEMBL132029 | 1.00 | — | — | |
| SCHEMBL9146049 | 1.00 | — | — | |
| SCHEMBL5308071 | 0.82 | — | — | |
| SCHEMBL9419859 | 0.82 | — | — | |
| SCHEMBL11444359 | 0.82 | — | — | |
| SCHEMBL8434679 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2419 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115623773-B | SRAM memory cell based on composite structure SOI MOS anti-radiation device | XIDIAN UNIVERSITY (CN) | 2026-05-26 | — | — | CN | claimed |
| EP-4111051-B1 | TUNGSTEN-BASED EROSION-RESISTANT LEADING EDGE PROTECTION CAP FOR ROTOR BLADES | LM WIND POWER AS (DK) | 2026-04-01 | — | — | EP | claimed |
| US-20260026032-A1 | METAL GATED LIGHTLY DOPED DRAIN STRING DRIVER DEVICE AND METHOD THEREOF | MICRON TECHNOLOGY INC (US) | 2026-01-22 | — | — | US | claimed |
| US-12519014-B2 | Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (DRAM) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2026-01-06 | — | — | US | claimed |
| US-20250318110-A1 | SEMICONDUCTOR DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-10-09 | — | — | US | claimed |
| US-12431407-B2 | Memory device with low density thermal barrier | MICRON TECHNOLOGY, INC. (US) | 2025-09-30 | — | — | US | claimed |
| US-20250294750-A1 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE | KIOXIA CORPORATION (JP) | 2025-09-18 | — | — | US | claimed |
| US-12394632-B2 | Plasma processing method and plasma processing system | TOKYO ELECTRON LIMITED (JP) | 2025-08-19 | — | — | US | claimed |
| US-20250234520-A1 | SEMICONDUCTOR STRUCTURE INCLUDING POLYSILICON AS BOTTOM LAYER OF BIT LINE STRUCTURE AND METHOD OF MANUFACTURING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-17 | — | — | US | claimed |
| US-20250234516-A1 | SEMICONDUCTOR STRUCTURE INCLUDING POLYSILICON AS BOTTOM LAYER OF BIT LINE STRUCTURE AND METHOD OF MANUFACTURING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-17 | — | — | US | claimed |
| CN-1037723-C | Method for manufacturing read-only memory by ion implantation technology | MAOXI ELECTRONIC CO LTD TAIWAN (CN) | 1998-03-11 | — | — | CN | claimed |
| US-5691223-A | Method of fabricating a capacitor over a bit line DRAM process | MOSEL VITELIC INC. (TW) | 1997-11-25 | — | — | US | claimed |
| US-5583065-A | Method of making a MOS semiconductor device | SONY CORPORATION (JP) | 1996-12-10 | — | — | US | claimed |
| CN-1125640-A | Isobutane and butene alkylated solid heteropoly acid salt catalyzer | CHINA PETROCHEMICAL CORP (CN) | 1996-07-03 | — | — | CN | claimed |
| EP-0718868-A2 | Polysilicon/Polycide etch process for sub-micron gate stacks | SIEMENS AKTIENGESELLSCHAFT (DE) | 1996-06-26 | — | — | EP | claimed |
| US-5529197-A | Polysilicon/polycide etch process for sub-micron gate stacks | SIEMENS AKTIENGESELLSCHAFT (DE) | 1996-06-25 | — | — | US | claimed |
| CN-1120232-A | Method for manufacturing read-only memory by ion implantation technology | MAOXI ELECTRONIC CO LTD TAIWAN (CN) | 1996-04-10 | — | — | CN | claimed |
| CN-1005880-B | Method for depositing vertical resistor | 英特尔公司 | 1989-11-22 | — | — | CN | claimed |
| CN-86107982-A | Deposit the method for vertical direction resistance with the chemical vapour deposition technique of plasma enhancing | — | 1987-08-12 | — | — | CN | claimed |
| US-4536943-A | Method of manufacturing a FET | TOKYO SHIBAURA DENKI KABUSHIKI KAISHA (JP) | 1985-08-27 | — | — | US | claimed |