SCHEMBL13315399

SCHEMBL13315399

C=C(C)C(=O)OC(CCCC)CCCO

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.43
PRKCA P17252 3/20 0.37
PRKCD Q05655 1/20 0.37
CTSK P43235 2/20 0.36
MAPK1 P28482 2/20 0.35
MAPT P10636 1/20 0.35
ALDH1A1 P00352 2/20 0.33
CA2 P00918 2/20 0.33
CA1 P00915 1/20 0.33
THRB P10828 1/20 0.33
PTPN1 P18031 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10187198 0.95 TSHR (0.42) TSHRPRKCAPRKCDCTSKMAPK1
SCHEMBL1577727 0.93 TSHR (0.48) TSHRPRKCAPRKCDCTSKMAPK1
SCHEMBL1759349 0.93 TSHR (0.39) TSHRALDH1A1THRB
SCHEMBL31757150 0.91 TSHR (0.47) TSHRPRKCAPRKCDCTSKMAPK1
SCHEMBL17222845 0.90 TSHR (0.49) TSHRPRKCAMAPK1MAPTALDH1A1
SCHEMBL7179762 0.90 TSHR (0.47) TSHRPRKCAMAPK1MAPTCA1
SCHEMBL1692337 0.89 TSHR (0.46) TSHRPRKCAPRKCDCTSKMAPK1
SCHEMBL1493259 0.89 TSHR (0.50) TSHRPRKCAPRKCDCTSKMAPK1
Methacrylic Acid SCHEMBL28825177 0.89 TSHR (0.44) TSHRPRKCAPRKCDCTSKMAPK1
SCHEMBL28270472 0.88 TSHR (0.39) TSHRPRKCAPRKCDCTSKMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-7741015-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-22 US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed