SCHEMBL13446307

SCHEMBL13446307

C=Cc1ccc(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)NS(C)(=O)=O)cc1

nearest known ligand 0.34

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CXCR2 P25025 1/20 0.34
PIK3CD O00329 1/20 0.33
PIK3CA P42336 1/20 0.33
PIK3CB P42338 1/20 0.33
TDP1 Q9NUW8 1/20 0.31
KIF11 P52732 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17999228 0.88 PIK3CD (0.35) CXCR2PIK3CDPIK3CAPIK3CBTDP1
SCHEMBL2742196 0.88 PTPN1 (0.38) CXCR2PIK3CDPIK3CAPIK3CBTDP1
SCHEMBL2742198 0.86 PTPN1 (0.34)
SCHEMBL15450646 0.85 PIK3CD (0.32) PIK3CDPIK3CAPIK3CB
SCHEMBL15450638 0.82 CXCR2 (0.38) CXCR2PIK3CDPIK3CAPIK3CBKIF11
SCHEMBL683020 0.80 PIK3CD (0.36) PIK3CDPIK3CAPIK3CBTDP1KIF11
SCHEMBL940747 0.80 PIK3CD (0.42) PIK3CDPIK3CAPIK3CBTDP1KIF11
SCHEMBL683397 0.79 TDP1 (0.42) CXCR2PIK3CDPIK3CAPIK3CBTDP1
SCHEMBL17409277 0.79 STS (0.40) PIK3CDPIK3CAPIK3CBTDP1KIF11
SCHEMBL31019590 0.79 PIK3CD (0.46) PIK3CDPIK3CAPIK3CBTDP1KIF11

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-8940476-B2 Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film FUJIFILM CORPORATION (JP) 2015-01-27 US disclosed
US-20120264054-A1 PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-10-18 US disclosed