⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13446321 | 0.89 | — | — | |
| SCHEMBL14703683 | 0.86 | — | — | |
| SCHEMBL13446320 | 0.80 | — | — | |
| SCHEMBL15908880 | 0.79 | MLNR (0.32) | — | |
| SCHEMBL12399482 | 0.79 | TSHR (0.35) | — | |
| SCHEMBL18220793 | 0.78 | TP53 (0.34) | — | |
| SCHEMBL19480318 | 0.77 | MLNR (0.31) | — | |
| SCHEMBL12464844 | 0.76 | MEN1 (0.39) | — | |
| SCHEMBL2886990 | 0.76 | GAA (0.31) | — | |
| SCHEMBL13446309 | 0.75 | GAA (0.35) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-8940476-B2 | Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film | FUJIFILM CORPORATION (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8940476-B2 | Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film | FUJIFILM CORPORATION (JP) | 2015-01-27 | — | — | US | disclosed |
| US-20120264054-A1 | PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120264054-A1 | PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-10-18 | — | — | US | disclosed |