Phosphonic Acid

Phosphonic Acid

SCHEMBL1346960

O=[PH]([O-])[O-].O=[PH]([O-])[O-].O=[PH]([O-])[O-].[In+3].[In+3]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10266409-B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2019-04-23 US claimed
US-9884763-B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2018-02-06 US claimed
US-20240101900-A1 CADMIUM FREE REVERSE TYPE 1 NANOSTRUCTURES WITH IMPROVED BLUE LIGHT ABSORPTION FOR THIN FILM APPLICATIONS NANOSYS, INC. (US) 2024-03-28 US disclosed
US-11634631-B2 Cadmium free reverse type 1 nanostructures with improved blue light absorption for thin film applications NANOSYS, INC. (US) 2023-04-25 US disclosed
US-20200216756-A1 Cadmium Free Reverse Type 1 Nanostructures with Improved Blue Light Absorption for Thin Film Applications NANOSYS, INC. (US) 2020-07-09 US disclosed
US-10266409-B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2019-04-23 US disclosed
US-10029972-B2 Use of heteroleptic indium hydroxides as precursors for INP nanocrystals NANOSYS, INC. (US) 2018-07-24 US disclosed
US-9884763-B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2018-02-06 US disclosed
US-9688534-B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2017-06-27 US disclosed
US-20170137360-A1 USE OF HETEROLEPTIC INDIUM HYDROXIDES AS PRECURSORS FOR INP NANOCRYSTALS SHOEI CHEMICAL INC. (JP) 2017-05-18 US disclosed
WO-2017083483-A1 USE OF HETEROLEPTIC INDIUM HYDROXIDES AS PRECURSORS FOR INP NANOCRYSTALS NANOSYS, INC. (US) 2017-05-18 WO disclosed
US-9469538-B1 Process for group III-IV semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2016-10-18 US disclosed
US-8884273-B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2014-11-11 US disclosed
US-8062967-B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same NANOSYS, INC. (US) 2011-11-22 US disclosed
US-7557028-B1 For example, making indium phosphide (InP)semiconductors starting from tribenzoyl phosphine and tris-cyclopentadienyl indium; use in photovoltaic devices and light emitting diodes NANOSYS, INC. (US) 2009-07-07 US disclosed