Gallic Acid

Gallic Acid

SCHEMBL135339

O=C([O-])c1cc(O)c(O)c(O)c1.O=C([O-])c1cc(O)c(O)c(O)c1.O=C([O-])c1cc(O)c(O)c(O)c1.[Nd+3]

nearest known ligand 0.56

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.56
LMNA P02545 3/20 0.56
TDP1 Q9NUW8 3/20 0.56
ALDH1A1 P00352 2/20 0.56
MAPT P10636 2/20 0.56
FUT7 Q11130 2/20 0.56
CA1 P00915 2/20 0.56
CA2 P00918 2/20 0.56
CA12 O43570 1/20 0.56
TP53 P04637 1/20 0.56
CA3 P07451 1/20 0.56
SELL P14151 1/20 0.56
HPGD P15428 1/20 0.56
SELP P16109 1/20 0.56
FUT4 P22083 1/20 0.56
CA4 P22748 1/20 0.56
CA6 P23280 1/20 0.56
DPP4 P27487 1/20 0.56
MAPK1 P28482 1/20 0.56
CA5A P35218 1/20 0.56

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Gallic Acid SCHEMBL27328614 0.97 KDM4E (0.54) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL27674233 0.97 KDM4E (0.54) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL10394655 0.97 KDM4E (0.54) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL28647940 0.97 KDM4E (0.54) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL28654164 0.97 KDM4E (0.59) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL2522449 0.95 KDM4E (0.56) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL1060586 0.95 KDM4E (0.56) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL702574 0.95 KDM4E (0.56) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL21273262 0.95 KDM4E (0.56) KDM4ELMNATDP1ALDH1A1MAPT
Gallic Acid SCHEMBL21273260 0.95 KDM4E (0.56) KDM4ELMNATDP1ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 518 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4716401-A1 METHOD FOR MANUFACTURING A MEMRISTOR SYSTEM FOR A NEUROMORPHIC DEVICE RIJKSUNIVERSITEIT GRONINGEN (NL) 2026-03-25 EP claimed
CN-119900083-A Preparation method and application of hafnium oxide film 中国科学技术大学 2025-04-29 CN claimed
CN-119866014-A Ferroelectric memory and method for manufacturing the same 中国科学技术大学 2025-04-22 CN claimed
CN-117821902-B High-performance water-soluble sacrificial material and preparation method and application thereof 中国科学技术大学 2025-03-04 CN claimed
CN-117821902-A High-performance water-soluble sacrificial material and preparation method and application thereof 中国科学技术大学 2024-04-05 CN claimed
CN-117534099-A High-performance water-soluble sacrificial material for preparing self-supporting film, and preparation method and application thereof 中国科学技术大学 2024-02-09 CN claimed
US-20230122332-A1 EPITAXIAL FILM WITH MULTIPLE STRESS STATES AND METHOD THEREOF NATIONAL CHENG KUNG UNIVERSITY (TW) 2023-04-20 US claimed
US-20230048760-A1 FABRICATION OF SINGLE-CRYSTALLINE IONICALLY CONDUCTIVE MATERIALS AND RELATED ARTICLES AND SYSTEMS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2023-02-16 US claimed
WO-2021158731-A1 FABRICATION OF SINGLE-CRYSTALLINE IONICALLY CONDUCTIVE MATERIALS AND RELATED ARTICLES AND SYSTEMS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2021-08-12 WO claimed
CN-113061990-A Cobalt oxide-based magnetic oxide thin film and preparation method and application thereof 中国科学院物理研究所 2021-07-02 CN claimed
US-6066600-A Method of making high-Tc SSNS and SNS Josephson junction TRW INC. (US) 2000-05-23 US claimed
US-5892243-A High-temperature SSNS and SNS Josephson junction and method of making junction TRW INC. (US) 1999-04-06 US claimed
WO-1998020606-A2 TUNABLE DIELECTRIC FLIP CHIP VARACTORS SUPERCONDUCTING CORE TECHNOLOGIES, INC. (US) 1998-05-14 WO claimed
US-5747873-A Technique for fabricating hybrid high-temperature superconductor-semiconductor circuits NORTHROP GRUMMAN CORPORATION (US) 1998-05-05 US claimed
WO-1996017970-A2 CHEMICAL VAPOR DEPOSITION METHOD OF GROWING OXIDE FILMS WITH GIANT MAGNETORESISTANCE ADVANCED TECHNOLOGY MATERIALS, INC. (US) 1996-06-13 WO claimed
US-5487356-A LANTHIUM METAL MANGANATE FORMED ON A SUBSTRATE WITH VAPOR PHASE ADVANCED TECHNOLOGY MATERIALS, INC. (US) 1996-01-30 US claimed
US-5449659-A Fabrication of semiconductor/superconductor structures by fusion of two partial structures with incompatible processing characteristics CONDUCTUS, INC. (US) 1995-09-12 US claimed
US-5310705-A High-field magnets using high-critical-temperature superconducting thin films THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY (US) 1994-05-10 US claimed
EP-0584410-A1 Superconducting electronic structures and methods of preparing same CONDUCTUS, INC. (US) 1994-03-02 EP claimed
US-5280013-A Method of preparing high temperature superconductor films on opposite sides of a substrate CONDUCTUS, INC. (US) 1994-01-18 US claimed