SCHEMBL13648593

SCHEMBL13648593

CCOC(=O)CCC(C)C1CCC2C3CCC4CC(O)CCC4(C)C3CCC12C

nearest known ligand 0.81

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ GPBAR1 Q8TDU6 5/20 0.81
▸ VDR P11473 4/20 0.81
▸ HIF1A Q16665 3/20 0.81
▸ CYP2C9 P11712 2/20 0.81
▸ EPHA2 P29317 4/20 0.76
▸ CASP7 P55210 3/20 0.76
▸ TP53 P04637 2/20 0.76
▸ MAPK1 P28482 2/20 0.76
▸ HSD17B10 Q99714 2/20 0.76
▸ BLM P54132 2/20 0.76
▸ TDP1 Q9NUW8 2/20 0.76
▸ USP2 O75604 2/20 0.76
▸ CYP3A4 P08684 2/20 0.76
▸ MDM4 O15151 1/20 0.76
▸ MAPT P10636 1/20 0.76
▸ HSPD1 P10809 1/20 0.76
▸ TSHR P16473 1/20 0.76
▸ PTPN2 P17706 1/20 0.76
▸ PTPN1 P18031 1/20 0.76
▸ BRCA1 P38398 1/20 0.76

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5442887 1.00 GPBAR1 (0.81) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL19565489 1.00 GPBAR1 (0.81) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL5442890 1.00 GPBAR1 (0.81) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL5446368 0.96 GPBAR1 (0.76) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL5446372 0.96 GPBAR1 (0.76) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL5434273 0.92 GPBAR1 (0.79) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL5434267 0.92 GPBAR1 (0.79) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL139260 0.92 GPBAR1 (0.75) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL139261 0.92 GPBAR1 (0.75) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL5434017 0.91 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2014034533-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2014-03-06 — — WO disclosed
WO-2009119894-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 — — WO disclosed
Send feedback