SCHEMBL13649840

SCHEMBL13649840

CC(C)C(C)OC(=O)C1CC=CCC1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MIF P14174 1/20 0.40
ALDH1A1 P00352 2/20 0.36
MEN1 O00255 1/20 0.36
MAPT P10636 1/20 0.36
ALOX15 P16050 1/20 0.36
HTT P42858 1/20 0.36
KMT2A Q03164 1/20 0.36
ESR2 Q92731 1/20 0.36
HSD17B10 Q99714 1/20 0.36
TDP1 Q9NUW8 2/20 0.35
RAB9A P51151 1/20 0.33
GAA P10253 1/20 0.32
LMNA P02545 1/20 0.31
TP53 P04637 1/20 0.31
TSHR P16473 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA7 P43166 1/20 0.31
CA9 Q16790 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12251472 0.86 MIF (0.40) MIFALDH1A1MEN1MAPTALOX15
SCHEMBL4755288 0.86 MIF (0.42) MIFALDH1A1MEN1MAPTALOX15
SCHEMBL12251471 0.81 MIF (0.37) MIFALDH1A1MEN1MAPTALOX15
SCHEMBL17616819 0.80 MIF (0.39) MIFALDH1A1MEN1MAPTALOX15
SCHEMBL3792322 0.79 MIF (0.41) MIFALDH1A1MEN1MAPTALOX15
SCHEMBL22036029 0.78 MIF (0.37) MIFALDH1A1MEN1MAPTALOX15
SCHEMBL14753064 0.77 KMT2A (0.33) MAPTHTTKMT2ATDP1RAB9A
SCHEMBL12232865 0.77 KMT2A (0.33) MAPTHTTKMT2ATDP1RAB9A
SCHEMBL12251220 0.76 MIF (0.34) MIFALDH1A1MEN1MAPTALOX15
SCHEMBL11982130 0.76 TDP1 (0.46) MIFALDH1A1MEN1MAPTALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed