Silicate

Silicate

SCHEMBL1368102

O=[Si](O)O.[Y].[Zr]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Silicate SCHEMBL6014331 0.94
Silicate SCHEMBL21623665 0.94
Silicate SCHEMBL383405 0.94
Silicate SCHEMBL2881714 0.94
Silicate SCHEMBL11144732 0.94
Silicate SCHEMBL23354568 0.88
Silicate SCHEMBL7127550 0.88
Silicate SCHEMBL37071 0.88
Silicate SCHEMBL9422160 0.88
Silicate SCHEMBL1370719 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-221240653-U Backflow preventing device for improving unstable temperature in electric injection cavity 浙江润海新能源有限公司 2024-06-28 CN claimed
CN-117385485-B Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-02-23 CN claimed
CN-117385485-A Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-01-12 CN claimed
CN-221240653-U Backflow preventing device for improving unstable temperature in electric injection cavity 浙江润海新能源有限公司 2024-06-28 CN disclosed
CN-117385485-B Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-02-23 CN disclosed
CN-117385485-A Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-01-12 CN disclosed
US-8252674-B2 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-20110287622-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN (KR) 2011-11-24 US disclosed
US-8013402-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-06 US disclosed
US-20100025781-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN 2010-02-04 US disclosed
US-7615830-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-11-10 US disclosed
US-20060081948-A1 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-04-20 US disclosed