Silicate

Silicate

SCHEMBL1369455

O=[Si](O)O.[Gd].[La]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Silicate SCHEMBL17386416 0.94
Silicate SCHEMBL6045704 0.94
Silicate SCHEMBL11476016 0.88
Silicate SCHEMBL1367573 0.88
Silicate SCHEMBL1368121 0.88
Silicate SCHEMBL1369333 0.88
Silicate SCHEMBL1369954 0.88
Silicate SCHEMBL1370852 0.88
Silicate SCHEMBL1367440 0.88
Silicate SCHEMBL721478 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117385485-B Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-02-23 CN claimed
CN-117385485-A Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-01-12 CN claimed
CN-211859139-U All-solid-state femtosecond laser of Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-11-03 CN claimed
CN-111600183-A Laser output method for Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-08-28 CN claimed
CN-111478161-A All-solid-state femtosecond laser of Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-07-31 CN claimed
CN-117385485-B Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-02-23 CN disclosed
CN-117385485-A Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-01-12 CN disclosed
CN-110373072-B Radiation self-cooling functional coating and preparation method thereof 南京工业大学 2021-04-20 CN disclosed
CN-211859139-U All-solid-state femtosecond laser of Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-11-03 CN disclosed
CN-211859139-U All-solid-state femtosecond laser of Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-11-03 CN disclosed
CN-111600183-A Laser output method for Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-08-28 CN disclosed
CN-111600183-A Laser output method for Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-08-28 CN disclosed
CN-111478161-A All-solid-state femtosecond laser of Kerr mode-locked ytterbium-doped lanthanum gadolinium silicate crystal 马鞍山市华宇环保设备制造有限公司 2020-07-31 CN disclosed
US-8252674-B2 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-20110287622-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN (KR) 2011-11-24 US disclosed
US-8013402-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-06 US disclosed
US-20100025781-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN 2010-02-04 US disclosed
US-7615830-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-11-10 US disclosed
CN-101017870-A The fluorescent powder of white semiconductor light source and LaGa silicate base and its making method LUO WEIHONG (CN) 2007-08-15 CN disclosed
US-20060081948-A1 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-04-20 US disclosed