⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Silicate SCHEMBL20872944 | 0.94 | — | — | |
| Silicate SCHEMBL6045704 | 0.94 | — | — | |
| Silicate SCHEMBL16469632 | 0.88 | — | — | |
| Silicate SCHEMBL1370086 | 0.88 | — | — | |
| Silicate SCHEMBL663686 | 0.88 | — | — | |
| Silicate SCHEMBL11476016 | 0.88 | — | — | |
| Silicate SCHEMBL690184 | 0.88 | — | — | |
| Silicate SCHEMBL1367573 | 0.88 | — | — | |
| Silicate SCHEMBL721478 | 0.88 | — | — | |
| Silicate SCHEMBL16796524 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8252674-B2 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-08-28 | — | — | US | disclosed |
| US-20110287622-A1 | Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors | LIM HA-JIN (KR) | 2011-11-24 | — | — | US | disclosed |
| US-8013402-B2 | Transistors with multilayered dielectric films | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-06 | — | — | US | disclosed |
| US-20100025781-A1 | Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors | LIM HA-JIN | 2010-02-04 | — | — | US | disclosed |
| US-7615830-B2 | Transistors with multilayered dielectric films | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-11-10 | — | — | US | disclosed |
| US-20060081948-A1 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-04-20 | — | — | US | disclosed |