⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5777945 | 0.93 | — | — | |
| SCHEMBL311864 | 0.91 | — | — | |
| SCHEMBL1984720 | 0.82 | — | — | |
| SCHEMBL716347 | 0.82 | — | — | |
| SCHEMBL28273259 | 0.82 | — | — | |
| SCHEMBL25289404 | 0.77 | — | — | |
| SCHEMBL28373754 | 0.77 | — | — | |
| SCHEMBL4454962 | 0.77 | — | — | |
| SCHEMBL22283794 | 0.77 | — | — | |
| SCHEMBL23160952 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1122801-B1 | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus | SEMICONDUCTOR ENERGY LAB (JP) | 2017-03-22 | — | — | EP | disclosed |
| US-20120056750-A1 | PRESSURE SENSOR DEVICE AND EMERGENCY INFORMING APPARATUS | H3 SYSTEM CO., LTD. (KR) | 2012-03-08 | — | — | US | disclosed |
| US-7279194-B2 | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2007-10-09 | — | — | US | disclosed |
| EP-1039536-B1 | FERROELECTRIC MEMORY OR A METHOD OF PRODUCING THE SAME | ROHM CO LTD (JP) | 2006-03-01 | — | — | EP | disclosed |
| US-6396093-B1 | Ferroelectric memory with reduced capacitance of ferroelectric gate layer | ROHM CO., LTD. (JP) | 2002-05-28 | — | — | US | disclosed |
| US-20010023661-A1 | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. | 2001-09-27 | — | — | US | disclosed |
| EP-1122801-A2 | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1039536-A1 | FERROELECTRIC MEMORY OR A METHOD OF PRODUCING THE SAME | Rohm Co., Ltd. (JP) | 2000-09-27 | — | — | EP | disclosed |
| EP-0653501-B1 | Plasma-CVD method and apparatus | NISSIN ELECTRIC CO LTD (JP) | 1998-02-04 | — | — | EP | disclosed |
| US-5610853-A | Ferroelectric material, and semiconductor memory, optical recording medium and micro-displacement control device using the ferroelectric material | RICOH COMPANY, LTD. (JP) | 1997-03-11 | — | — | US | disclosed |
| US-5562952-A | APPLYING RADIO FREQUENCY POWER PREPARED BY EFFECTING FIRST AND SECOND AMPLITUDE MODULATION | NISSIN ELECTRIC CO., LTD. (JP) | 1996-10-08 | — | — | US | disclosed |
| US-5555219-A | Ferroelectric material, and semiconductor memory, optical recording medium and micro-displacement control device using the ferroelectric material | RICOH COMPANY, LTD. (JP) | 1996-09-10 | — | — | US | disclosed |
| EP-0653501-A1 | Plasma-CVD method and apparatus | NISSIN ELECTRIC COMPANY, LIMITED (JP) | 1995-05-17 | — | — | EP | disclosed |