⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL24221419 | 0.83 | — | — | |
| SCHEMBL16904314 | 0.78 | GRM5 (0.30) | — | |
| SCHEMBL16904310 | 0.76 | GRM5 (0.31) | — | |
| SCHEMBL13758546 | 0.76 | SLC1A2 (0.31) | — | |
| SCHEMBL13715907 | 0.76 | — | — | |
| SCHEMBL14494532 | 0.74 | — | — | |
| SCHEMBL29405942 | 0.73 | GRM5 (0.31) | — | |
| SCHEMBL16907332 | 0.73 | — | — | |
| SCHEMBL14599396 | 0.72 | — | — | |
| SCHEMBL12628449 | 0.71 | GRM5 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20230359119-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-09 | — | — | US | disclosed |
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-20230305394-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230305394-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230305393-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230305393-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230161252-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20170184962-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-06-29 | — | — | US | disclosed |
| US-9535325-B2 | Onium salt, chemically amplified positive resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-03 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20150198876-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-20150198876-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-20150198877-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-20150198877-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-20120288796-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120288796-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-15 | — | — | US | disclosed |