SCHEMBL13892950

SCHEMBL13892950

CC1CC[C@H](C)C2COC(=O)C12

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
▸ CYP2D6 P10635 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12961198 1.00 CYP2D6 (0.31) CYP2D6
SCHEMBL14818249 1.00 CYP2D6 (0.31) CYP2D6
SCHEMBL3205261 0.85 CYP2D6 (0.30) CYP2D6
SCHEMBL4637500 0.85 CYP2D6 (0.30) CYP2D6
SCHEMBL5073716 0.85 CYP2D6 (0.30) CYP2D6
SCHEMBL14401969 0.85 CYP2D6 (0.30) CYP2D6
SCHEMBL4636087 0.85 CYP2D6 (0.30) CYP2D6
SCHEMBL4606966 0.85 CYP2D6 (0.30) CYP2D6
SCHEMBL13077456 0.85 CYP2D6 (0.30) CYP2D6
SCHEMBL14510216 0.85 CYP2D6 (0.30) CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8507172-B2 Positive resist composition and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2013-08-13 — — US disclosed
US-7524609-B2 Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2009-04-28 — — US disclosed
US-20080227025-A1 Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups FUJIFILM CORPORATION (JP) 2008-09-18 — — US disclosed
US-7294450-B2 Chemical amplification-type resist composition and production process thereof FUJIFILM CORPORATION (JP) 2007-11-13 — — US disclosed
US-20070212645-A1 Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-09-13 — — US disclosed
US-20070172761-A1 Positive photosensitive composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2007-07-26 — — US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 — — US disclosed
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