SCHEMBL14315744

SCHEMBL14315744

CP(CCl)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
ESR1 P03372 4/20 0.39
ESR2 Q92731 4/20 0.39
TP53 P04637 1/20 0.32
TRPA1 O75762 1/20 0.31
ALDH1A1 P00352 1/20 0.31
MAPK1 P28482 1/20 0.31
GSK3B P49841 1/20 0.31
HIF1A Q16665 1/20 0.31
TSHR P16473 2/20 0.30
LMNA P02545 1/20 0.30
ALOX12 P18054 1/20 0.30
ACHE P22303 1/20 0.30
KCNN4 O15554 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10785234 0.78 CYP3A4 (0.45) CYP3A4TDP1ESR1ESR2TP53
SCHEMBL13391635 0.78 CYP3A4 (0.45) CYP3A4TDP1ESR1ESR2TP53
SCHEMBL9441831 0.78 CYP3A4 (0.45) CYP3A4TDP1ESR1ESR2TP53
SCHEMBL2782005 0.76 CYP3A4 (0.43) CYP3A4TDP1ESR1ESR2TP53
SCHEMBL15841160 0.75 ESR1 (0.31) CYP3A4TDP1ESR1ESR2
Bromide SCHEMBL493074 0.74 CYP3A4 (0.41) CYP3A4TDP1ESR1ESR2TP53
SCHEMBL9492996 0.74 CYP3A4 (0.41) CYP3A4TDP1ESR1ESR2TP53
SCHEMBL10024968 0.74 CYP3A4 (0.41) CYP3A4TDP1ESR1ESR2TP53
Hydrochloric Acid SCHEMBL493348 0.74 TDP1 (0.41) CYP3A4TDP1ESR1ESR2TP53
Bromide SCHEMBL8602057 0.74 CYP3A4 (0.41) CYP3A4TDP1ESR1ESR2TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9316910-B2 Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film FUJIFILM CORPORATION (JP) 2016-04-19 US disclosed
US-9017917-B2 Resist composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2015-04-28 US disclosed
US-20120322007-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed