⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrogen Sulfide SCHEMBL18725607 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL27746024 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL7139044 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL372550 | 0.87 | — | — | |
| Water SCHEMBL28136808 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL15064171 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL7650094 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL453693 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL2554593 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL2583945 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 263 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114242818-B | N-doped enhanced InGaS-based visible light detector and preparation method thereof | 华南理工大学 | 2024-03-22 | — | — | CN | claimed |
| US-11890229-B2 | Laser dosage determination by temperature monitoring | LUTRONIC VISION INC. | 2024-02-06 | — | — | US | claimed |
| CN-114242818-A | N-doped enhanced indium gallium sulfide visible light detector and preparation method thereof | 华南理工大学 | 2022-03-25 | — | — | CN | claimed |
| US-20210210645-A1 | CHALCOGENIDE SOLAR CELL HAVING TRANSPARENT CONDUCTING OXIDE BACK CONTACT, AND METHOD OF MANUFACTURING THE CHALCOGENIDE SOLAR CELL | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2021-07-08 | — | — | US | claimed |
| US-20210161704-A1 | LASER DOSAGE DETERMINATION BY TEMPERATURE MONITORING | LUTRONIC VISION INC. (US) | 2021-06-03 | — | — | US | claimed |
| US-10318832-B2 | Method and apparatus for authenticating user using vein pattern | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-11 | — | — | US | claimed |
| US-20160117563-A1 | METHOD AND APPARATUS FOR AUTHENTICATING USER USING VEIN PATTERN | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-04-28 | — | — | US | claimed |
| US-9293266-B2 | Asphaltene based photovoltaic devices | BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) | 2016-03-22 | — | — | US | claimed |
| US-20140234026-A1 | ASPHALTENE BASED PHOTOVOLTAIC DEVICES | BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) | 2014-08-21 | — | — | US | claimed |
| US-8748740-B2 | Asphaltene based photovoltaic devices | BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) | 2014-06-10 | — | — | US | claimed |
| US-20070169811-A1 | High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070169810-A1 | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070169809-A1 | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070169813-A1 | High-throughput printing of semiconductor precursor layer from microflake particles | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070169812-A1 | High-throughput printing of semiconductor precursor layer from nanoflake particles | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070163638-A1 | Photovoltaic devices printed from nanostructured particles | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070166453-A1 | High-throughput printing of chalcogen layer | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070163639-A1 | High-throughput printing of semiconductor precursor layer from microflake particles | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070163640-A1 | High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070163637-A1 | High-throughput printing of semiconductor precursor layer from nanoflake particles | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |