Hydrogen Sulfide

Hydrogen Sulfide

SCHEMBL1438516

S.[InH3].[NaH]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 137 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107210187-B Method for producing a layer system for a thin-film solar cell having a sodium indium sulfide buffer layer 蚌埠玻璃工业设计研究院 2020-08-21 CN claimed
EP-3238228-B1 METHOD FOR PRODUCING A LAYER SYSTEM FOR THIN-FILM SOLAR CELLS HAVING A SODIUM INDIUM SULFIDE BUFFER LAYER BENGBU DESIGN & RES INST GLASS IND (CN) 2019-07-31 EP claimed
US-20170345651-A1 METHOD FOR PRODUCING A LAYER SYSTEM FOR THIN-FILM SOLAR CELLS HAVING A SODIUM INDIUM SULFIDE BUFFER LAYER BENGBU DESIGN & RESEARCH INSTITUTE FOR GLASS INDUSTRY (CN) 2017-11-30 US claimed
EP-3238228-A1 METHOD FOR PRODUCING A LAYER SYSTEM FOR THIN-FILM SOLAR CELLS HAVING A SODIUM INDIUM SULFIDE BUFFER LAYER Bengbu Design & Research Institute for Glass Industry (CN) 2017-11-01 EP claimed
US-20120315722-A1 High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles NANOSOLAR, INC. (US) 2012-12-13 US claimed
US-20120295022-A1 High-Throughput Printing of Chalcogen Layer NANOSOLAR, INC. (US) 2012-11-22 US claimed
US-7700464-B2 High-throughput printing of semiconductor precursor layer from nanoflake particles NANOSOLAR, INC. (US) 2010-04-20 US claimed
WO-2009051862-A2 SEMICONDUCTOR THIN FILMS FORMED FROM NON-SPHERICAL PARTICLES VAN DUREN JEROEN K J (US) 2009-04-23 WO claimed
EP-1998902-A2 HIGH-THROUGHPUT FORMATION OF SEMICONDUCTOR LAYER BY USE OF CHALCOGEN AND INTER-METALLIC MATERIAL Van Duren, Jeroen K.J. (US) 2008-12-10 EP claimed
EP-1997149-A2 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC MICROFLAKE PARTICLES Van Duren, Jeroen K.J. (US) 2008-12-03 EP claimed
US-20070169813-A1 High-throughput printing of semiconductor precursor layer from microflake particles NANOSOLAR, INC. (US) 2007-07-26 US claimed
US-20070169811-A1 High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients NANOSOLAR, INC. (US) 2007-07-26 US claimed
US-20070169810-A1 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor NANOSOLAR, INC. (US) 2007-07-26 US claimed
US-20070169809-A1 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides NANOSOLAR, INC. (US) 2007-07-26 US claimed
US-20070169812-A1 High-throughput printing of semiconductor precursor layer from nanoflake particles NANOSOLAR, INC. (US) 2007-07-26 US claimed
US-20070163638-A1 Photovoltaic devices printed from nanostructured particles NANOSOLAR, INC. (US) 2007-07-19 US claimed
US-20070163637-A1 High-throughput printing of semiconductor precursor layer from nanoflake particles NANOSOLAR, INC. (US) 2007-07-19 US claimed
US-20070166453-A1 High-throughput printing of chalcogen layer NANOSOLAR, INC. (US) 2007-07-19 US claimed
US-20070163640-A1 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides NANOSOLAR, INC. (US) 2007-07-19 US claimed
US-20070163639-A1 High-throughput printing of semiconductor precursor layer from microflake particles NANOSOLAR, INC. (US) 2007-07-19 US claimed