Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | CA9 | Q16790 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL460597 | 0.82 | — | — | |
| SCHEMBL3298151 | 0.61 | — | — | |
| Ethane SCHEMBL29463412 | 0.59 | — | — | |
| SCHEMBL9005288 | 0.58 | — | — | |
| SCHEMBL1512953 | 0.58 | — | — | |
| SCHEMBL165 | 0.58 | — | — | |
| SCHEMBL9526624 | 0.55 | CA1 (0.57) | CA1ALDH1A1TSHRCA9TDP1 | |
| SCHEMBL25266468 | 0.52 | CA1 (0.80) | CA1ALDH1A1TSHRCA9TDP1 | |
| SCHEMBL23632800 | 0.52 | CA1 (0.80) | CA1ALDH1A1TSHRCA9TDP1 | |
| SCHEMBL25225739 | 0.52 | CA1 (0.80) | CA1ALDH1A1TSHRCA9TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8927400-B2 | Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers | APPLIED MATERIALS, INC. (US) | 2015-01-06 | — | — | US | disclosed |
| US-20140248759-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-8387557-B2 | Method for forming silicon-containing materials during a photoexcitation deposition process | APPLIED MATERIALS (US) | 2013-03-05 | — | — | US | disclosed |
| US-8043907-B2 | Atomic layer deposition processes for non-volatile memory devices | APPLIED MATERIALS, INC. (US) | 2011-10-25 | — | — | US | disclosed |
| US-7910446-B2 | Integrated scheme for forming inter-poly dielectrics for non-volatile memory devices | APPLIED MATERIALS, INC. (US) | 2011-03-22 | — | — | US | disclosed |
| US-7846793-B2 | Plasma surface treatment for SI and metal nanocrystal nucleation | APPLIED MATERIALS, INC. (US) | 2010-12-07 | — | — | US | disclosed |
| US-20100173484-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. | 2010-07-08 | — | — | US | disclosed |
| US-20100102376-A1 | Atomic Layer Deposition Processes for Non-Volatile Memory Devices | APPLIED MATERIALS, INC. (US) | 2010-04-29 | — | — | US | disclosed |
| US-20100018460-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-01-28 | — | — | US | disclosed |
| US-7651955-B2 | Method for forming silicon-containing materials during a photoexcitation deposition process | APPLIED MATERIALS, INC. (US) | 2010-01-26 | — | — | US | disclosed |
| US-7648927-B2 | Method for forming silicon-containing materials during a photoexcitation deposition process | APPLIED MATERIALS, INC. (US) | 2010-01-19 | — | — | US | disclosed |
| US-20090090952-A1 | PLASMA SURFACE TREATMENT FOR SI AND METAL NANOCRYSTAL NUCLEATION | APPLIED MATERIALS, INC. | 2009-04-09 | — | — | US | disclosed |
| US-20090020802-A1 | INTEGRATED SCHEME FOR FORMING INTER-POLY DIELECTRICS FOR NON-VOLATILE MEMORY DEVICES | APPLIED MATERIALS, INC. | 2009-01-22 | — | — | US | disclosed |
| WO-2008077020-A2 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. (US) | 2008-06-26 | — | — | WO | disclosed |
| US-20080153271-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. | 2008-06-26 | — | — | US | disclosed |
| WO-2007002040-A2 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2007-01-04 | — | — | WO | disclosed |
| US-20060286774-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS. INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286775-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286776-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |