⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1069538 | 0.76 | — | — | |
| SCHEMBL31621290 | 0.76 | — | — | |
| SCHEMBL1247370 | 0.76 | TSHR (0.30) | — | |
| SCHEMBL1470653 | 0.75 | — | — | |
| SCHEMBL1472166 | 0.72 | — | — | |
| SCHEMBL22607609 | 0.72 | — | — | |
| SCHEMBL1224082 | 0.72 | — | — | |
| SCHEMBL17889227 | 0.72 | — | — | |
| SCHEMBL1472168 | 0.72 | — | — | |
| SCHEMBL28454324 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115356873-B | Resin composition, light-shielding film, method for producing light-shielding film, and substrate with barrier ribs | 东丽株式会社 | 2025-04-25 | — | — | CN | disclosed |
| EP-3410468-B1 | N-TYPE SEMICONDUCTOR ELEMENT, COMPLEMENTARY TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND WIRELESS COMMUNICATION DEVICE IN WHICH THE SAME IS USED | TORAY INDUSTRIES (JP) | 2024-07-10 | — | — | EP | disclosed |
| EP-3382751-B1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | TORAY INDUSTRIES (JP) | 2023-09-13 | — | — | EP | disclosed |
| US-11690237-B2 | Field effect-transistor, method for manufacturing same, wireless communication device using same, and product tag | TORAY INDUSTRIES, INC. (JP) | 2023-06-27 | — | — | US | disclosed |
| CN-109716491-B | Method for manufacturing field effect transistor and method for manufacturing wireless communication device | 东丽株式会社 | 2023-06-09 | — | — | CN | disclosed |
| CN-111771163-B | Negative photosensitive coloring composition, cured film, and touch panel using same | 东丽株式会社 | 2023-06-02 | — | — | CN | disclosed |
| CN-111095566-B | Field effect transistor, method of manufacturing the same, wireless communication device using the same, and merchandise tag | 东丽株式会社 | 2023-05-23 | — | — | CN | disclosed |
| CN-111295755-B | Integrated circuit, method of manufacturing the same, and wireless communication device using the same | 东丽株式会社 | 2023-05-12 | — | — | CN | disclosed |
| EP-3514822-B1 | METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES (JP) | 2023-04-26 | — | — | EP | disclosed |
| CN-108292630-B | Ferroelectric memory element, method for manufacturing the same, memory cell using the same, and wireless communication device using the same | 东丽株式会社 | 2023-04-25 | — | — | CN | disclosed |
| US-20180026197-A1 | RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES, INC. (JP) | 2018-01-25 | — | — | US | disclosed |
| CN-107431096-A | Rectifier cell, its manufacture method and radio communication device | 东丽株式会社 | 2017-12-01 | — | — | CN | disclosed |
| US-20160035457-A1 | FIELD EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2016-02-04 | — | — | US | disclosed |
| EP-2975649-A1 | FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2016-01-20 | — | — | EP | disclosed |
| CN-105190901-A | Field effect transistor | TORAY INDUSTRIES | 2015-12-23 | — | — | CN | disclosed |
| US-9048445-B2 | Gate insulating material, gate insulating film and organic field-effect transistor | TORAY INDUSTRIES, INC. (JP) | 2015-06-02 | — | — | US | disclosed |
| CN-102089870-B | Gate insulating material, gate insulating film, and organic field effect transistor | TORAY INDUSTRIES | 2013-08-28 | — | — | CN | disclosed |
| CN-102089870-A | Gate insulating material, gate insulating film, and organic field effect transistor | TORAY INDUSTRIES | 2011-06-08 | — | — | CN | disclosed |
| US-20110068417-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2011-03-24 | — | — | US | disclosed |
| EP-2259289-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2010-12-08 | — | — | EP | disclosed |