SCHEMBL1470792

SCHEMBL1470792

CC(F)(CF)C(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21977576 0.78
SCHEMBL9472534 0.75
SCHEMBL8634393 0.75
SCHEMBL23746600 0.73
SCHEMBL8740281 0.73
SCHEMBL1470785 0.73
SCHEMBL20249080 0.71
SCHEMBL323519 0.70
SCHEMBL20595260 0.69
SCHEMBL12562253 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10651286-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-05-12 US disclosed
US-20190305109-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION 2019-10-03 US disclosed
US-10325998-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-06-18 US disclosed
US-10269924-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-04-23 US disclosed
US-20170194497-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION 2017-07-06 US disclosed
US-20170194457-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION 2017-07-06 US disclosed
US-9633948-B2 Low energy etch process for nitrogen-containing dielectric layer GLOBALFOUNDRIES INC. (KY) 2017-04-25 US disclosed
US-9627533-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-04-18 US disclosed
CN-103946954-B Use the high-fidelity composition of the polymer comprising fluorohydrocarbon 国际商业机器公司 2016-12-28 CN disclosed
CN-103890918-B high selectivity nitride etch process 国际商业机器公司 2016-08-31 CN disclosed
WO-2013063182-A1 HIGH SELECTIVITY NITRIDE ETCH PROCESS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-05-02 WO disclosed
US-20130105996-A1 LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER ZEON CORPORATION (JP) 2013-05-02 US disclosed
US-20130105916-A1 HIGH SELECTIVITY NITRIDE ETCH PROCESS ZEON CORPORATION (JP) 2013-05-02 US disclosed
CN-101983417-B Plasma etching method ZEON CORP 2013-04-24 CN disclosed
US-20110068086-A1 PLASMA ETCHING METHOD ZEON CORPORATION (JP) 2011-03-24 US disclosed
CN-101983417-A Plasma etching method ZEON CORP 2011-03-02 CN disclosed
US-5705716-A COMPOUNDS FOR SOLVENTS AND BLOWING AGENTS ALLIEDSIGNAL INC. (US) 1998-01-06 US disclosed
US-5316690-A Blowing agents or solvents ALLIED SIGNAL INC. (US) 1994-05-31 US disclosed
US-5158617-A Method of cleaning using hydrochlorofluorocarbons having 3 to 5 carbon atoms ALLIED-SIGNAL INC. 1992-10-27 US disclosed
WO-1992016674-A2 A METHOD OF CLEANING USING HYDROCHLOROFLUOROCARBONS HAVING 3 TO 5 CARBON ATOMS ALLIED-SIGNAL INC. (US) 1992-10-01 WO disclosed