SCHEMBL1470832

SCHEMBL1470832

FC1CCCC1(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708463 0.91
SCHEMBL26132841 0.91
SCHEMBL61023 0.76
SCHEMBL5763715 0.73
SCHEMBL7053959 0.73
SCHEMBL1470794 0.71
SCHEMBL7670859 0.71
SCHEMBL7471548 0.71
SCHEMBL1470805 0.71
SCHEMBL35211257 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115466601-B Fluorine-containing electronic cooling liquid 北京宇极科技发展有限公司 2023-03-24 CN claimed
CN-115466601-A Fluorine-containing electronic cooling liquid 北京宇极科技发展有限公司 2022-12-13 CN claimed
US-20250343048-A1 ETCHING METHOD RESONAC CORPORATION (JP) 2025-11-06 US disclosed
EP-4481794-A1 ETCHING METHOD Resonac Corporation (JP) 2024-12-25 EP disclosed
CN-118679554-A Etching method 株式会社力森诺科 2024-09-20 CN disclosed
WO-2023157441-A1 ETCHING METHOD 株式会社レゾナック 2023-08-24 WO disclosed
CN-115466601-B Fluorine-containing electronic cooling liquid 北京宇极科技发展有限公司 2023-03-24 CN disclosed
CN-115466601-A Fluorine-containing electronic cooling liquid 北京宇极科技发展有限公司 2022-12-13 CN disclosed
US-10651286-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-05-12 US disclosed
US-20190305109-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION 2019-10-03 US disclosed
US-10325998-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-06-18 US disclosed
US-20130105996-A1 LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER ZEON CORPORATION (JP) 2013-05-02 US disclosed
WO-2013063179-A1 LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-05-02 WO disclosed
US-20120321964-A1 NONAQUEOUS SOLVENT AND NONAQUEOUS ELECTROLYTIC SOLUTION FOR ELECTRICAL STORAGE DEVICE AND NONAQUEOUS ELECTRICAL STORAGE DEVICE, LITHIUM SECONDARY BATTERY AND ELECTRIC DOUBLE LAYER CAPACITOR USING THE SAME PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (JP) 2012-12-20 US disclosed
US-20110068086-A1 PLASMA ETCHING METHOD ZEON CORPORATION (JP) 2011-03-24 US disclosed
US-20100041700-A1 Substituted 1-(Azolin-2-yl)-Amino-1,2-Heterocyclyl-Ethane Compounds For Combating Pests BASF SE (DE) 2010-02-18 US disclosed
US-6927010-B2 Resist material and exposure method SONY CORPORATION (JP) 2005-08-09 US disclosed
US-20030180656-A1 Resist material and exposure method SONY CORPORATION (JP) 2003-09-25 US disclosed
US-6156824-A Lubricative polymer containing liquid and method of forming film of lubricative polymer NIPPON ZEON CO., LTD. (JP) 2000-12-05 US disclosed
EP-0889092-A1 LUBRICATIVE POLYMER CONTAINING LIQUID AND METHOD OF FORMING FILM OF LUBRICATIVE POLYMER NIPPON ZEON CO., LTD. (JP) 1999-01-07 EP disclosed