SCHEMBL1471625

SCHEMBL1471625

[Co].[Ge].[Mn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL34463691 0.87
SCHEMBL31158223 0.87
SCHEMBL9657420 0.82
SCHEMBL180198 0.82
SCHEMBL1201438 0.82
SCHEMBL28173567 0.82
SCHEMBL28153589 0.82
SCHEMBL1549807 0.82
SCHEMBL21633913 0.67
Water SCHEMBL22835119 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 48 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12154603-B1 Spin-orbit torque (SOT) writer with topological insulator materials WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2024-11-26 US claimed
US-11682420-B2 Seed layer for spin torque oscillator in microwave assisted magnetic recording device WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2023-06-20 US claimed
US-20210390977-A1 Seed Layer For Spin Torque Oscillator In Microwave Assisted Magnetic Recording Device WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2021-12-16 US claimed
US-10366714-B1 Magnetic write head for providing spin-torque-assisted write field enhancement WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2019-07-30 US claimed
CN-110797060-B Vertical SOT-MRAM memory cell using spin-exchange induced spin current 闪迪技术有限公司 2024-03-22 CN disclosed
US-11751484-B2 Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic laver Integrated Silicon Solution, (Cayman) Inc. (KY) 2023-09-05 US disclosed
US-11751481-B2 Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer Integrated Silicon Solution, (Cayman) Inc. (KY) 2023-09-05 US disclosed
US-11450803-B2 Resistance change element and method of manufacturing such TDK CORPORATION (JP) 2022-09-20 US disclosed
US-11417379-B2 Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same SANDISK TECHNOLOGIES LLC (US) 2022-08-16 US disclosed
US-11411170-B2 Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same SANDISK TECHNOLOGIES LLC (US) 2022-08-09 US disclosed
CN-114730590-A Magnetic tunnel junction memory device employing resonant tunneling and method of manufacturing the same 桑迪士克科技有限责任公司 2022-07-08 CN disclosed
US-11349066-B2 Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same SANDISK TECHNOLOGIES LLC (US) 2022-05-31 US disclosed
CN-1290117-C Magnetic memory TOSHIBA KK (JP) 2006-12-13 CN disclosed
US-7054187-B2 Magnetic memory KABUSHIKI KAISHA TOSHIBA (JP) 2006-05-30 US disclosed
US-20050083745-A1 Magnetic memory KABUSHIKI KAISHA TOSHIBA (JP) 2005-04-21 US disclosed
US-6831855-B2 Magnetic memory KABUSHIKI KAISHA TOSHIBA (JP) 2004-12-14 US disclosed
US-20030156476-A1 Magnetic memory KABUSHIKI KAISHA TOSHIBA (JP) 2003-08-21 US disclosed
CN-1433020-A Magnetic memory TOSHIBA KK (JP) 2003-07-30 CN disclosed
US-5376000-A Apparatus and process for extracting metal values from foundry sands INSTITUTO NACIONAL DE INVESTIGACIONES NUCLEARES (MX) 1994-12-27 US disclosed
US-5356601-A Apparatus and process for extracting metal values from foundry sands INSTITUTO NACIONAL DE INVESTIGACIONES NUCLEARES (MX) 1994-10-18 US disclosed