⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methane SCHEMBL17670000 | 0.87 | — | — | |
| Methane SCHEMBL29265610 | 0.87 | — | — | |
| Methane SCHEMBL27849793 | 0.87 | — | — | |
| Methane SCHEMBL28299638 | 0.87 | — | — | |
| Methane SCHEMBL28167325 | 0.87 | — | — | |
| Methane SCHEMBL28299415 | 0.87 | — | — | |
| Methane SCHEMBL27707596 | 0.87 | — | — | |
| Methane SCHEMBL1856821 | 0.82 | — | — | |
| Methane SCHEMBL402611 | 0.82 | — | — | |
| Phosphine SCHEMBL10628146 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 139 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120057924-A | Preparation method of high-capacity silicon-carbon anode material | 南通睿理新能源科技有限公司 | 2025-05-30 | — | — | CN | claimed |
| CN-110729189-B | Semiconductor device and method for manufacturing the same | 中芯国际集成电路制造（天津）有限公司 | 2023-06-30 | — | — | CN | claimed |
| CN-110854200-B | N-type semiconductor device and method for manufacturing the same | 上海华力集成电路制造有限公司 | 2023-04-07 | — | — | CN | claimed |
| US-20220199804-A1 | Integrated CMOS Source Drain Formation With Advanced Control | APPLIED MATERIALS, INC. (US) | 2022-06-23 | — | — | US | claimed |
| US-11309404-B2 | Integrated CMOS source drain formation with advanced control | APPLIED MATERIALS, INC. (US) | 2022-04-19 | — | — | US | claimed |
| CN-109755297-B | Semiconductor device and method for manufacturing the same | 中芯国际集成电路制造(上海)有限公司 | 2021-09-03 | — | — | CN | claimed |
| US-10998425-B2 | FinFET structure and method for fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-04 | — | — | US | claimed |
| CN-110854200-A | N-type semiconductor device and method of manufacturing the same | 上海华力集成电路制造有限公司 | 2020-02-28 | — | — | CN | claimed |
| CN-110729189-A | Semiconductor device and method for manufacturing the same | 中芯国际集成电路制造（天津）有限公司 | 2020-01-24 | — | — | CN | claimed |
| CN-104241360-B | Semiconductor device and method for fabricating the same | 联华电子股份有限公司 | 2019-07-23 | — | — | CN | claimed |
| US-20180040720-A1 | FINFET Structure and Method for Fabricating the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2018-02-08 | — | — | US | claimed |
| US-9853129-B2 | Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth | APPLIED MATERIALS, INC. (US) | 2017-12-26 | — | — | US | claimed |
| US-20170330960-A1 | FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET USING N-DOPED SELECTIVE EPITAXIAL GROWTH | APPLIED MATERIALS, INC. | 2017-11-16 | — | — | US | claimed |
| US-9536985-B2 | Epitaxial growth of material on source/drain regions of FinFET structure | GLOBALFOUNDRIES INC. (KY) | 2017-01-03 | — | — | US | claimed |
| US-9520498-B2 | FinFET structure and method for fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-12-13 | — | — | US | claimed |
| US-9425310-B2 | Methods for forming wrap around contact | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2016-08-23 | — | — | US | claimed |
| US-20160093720-A1 | EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRUCTURE | GLOBALFOUNDRIES U.S. INC. | 2016-03-31 | — | — | US | claimed |
| US-20150263159-A1 | FINFET Structure and Method for Fabricating the Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2015-09-17 | — | — | US | claimed |
| US-20150255604-A1 | WRAP AROUND CONTACT | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2015-09-10 | — | — | US | claimed |
| CN-104241360-A | Semiconductor device and method for fabricating the same | UNITED MICROELECTRONICS CORP | 2014-12-24 | — | — | CN | claimed |