SCHEMBL14890263

SCHEMBL14890263

FC1=CC(F)CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24593004 0.86
SCHEMBL16846798 0.69
SCHEMBL6407765 0.69
SCHEMBL2989431 0.64
SCHEMBL11722180 0.64
SCHEMBL22001064 0.64
SCHEMBL12327733 0.62
SCHEMBL12327418 0.62
SCHEMBL18566518 0.62
SCHEMBL9845674 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10651286-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-05-12 US disclosed
US-20190305109-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION 2019-10-03 US disclosed
US-10325998-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-06-18 US disclosed
US-10269924-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-04-23 US disclosed
US-20170194497-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION 2017-07-06 US disclosed
US-20170194457-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION INTERNATIONAL BUSINESS MACHINES CORPORATION 2017-07-06 US disclosed
US-9633948-B2 Low energy etch process for nitrogen-containing dielectric layer GLOBALFOUNDRIES INC. (KY) 2017-04-25 US disclosed
US-9627533-B2 High selectivity nitride removal process based on selective polymer deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-04-18 US disclosed
US-20160233335-A1 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION ZEON CORPORATION (JP) 2016-08-11 US disclosed
US-20160111374-A1 LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER GLOBALFOUNDRIES U.S. INC. 2016-04-21 US disclosed
CN-103946954-A High fidelity patterning employing a fluorohydrocarbon-containing polymer IBM 2014-07-23 CN disclosed
CN-103946975-A Low energy etch process for nitrogen-containing dielectric layer IBM 2014-07-23 CN disclosed
US-8765613-B2 High selectivity nitride etch process INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-07-01 US disclosed
CN-103890918-A High selectivity nitride etch process IBM 2014-06-25 CN disclosed
WO-2013063179-A1 LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-05-02 WO disclosed
WO-2013062985-A1 HIGH FIDELITY PATTERNING EMPLOYING A FLUOROHYDROCARBON-CONTAINING POLYMER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-05-02 WO disclosed
US-20130108833-A1 HIGH FIDELITY PATTERNING EMPLOYING A FLUOROHYDROCARBON-CONTAINING POLYMER ZEON CORPORATION (JP) 2013-05-02 US disclosed
US-20130105916-A1 HIGH SELECTIVITY NITRIDE ETCH PROCESS ZEON CORPORATION (JP) 2013-05-02 US disclosed
WO-2013063182-A1 HIGH SELECTIVITY NITRIDE ETCH PROCESS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-05-02 WO disclosed
US-20130105996-A1 LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER ZEON CORPORATION (JP) 2013-05-02 US disclosed