⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18689867 | 1.00 | — | — | |
| SCHEMBL12054578 | 0.77 | — | — | |
| SCHEMBL727224 | 0.77 | — | — | |
| SCHEMBL20654105 | 0.72 | — | — | |
| SCHEMBL13407908 | 0.72 | — | — | |
| SCHEMBL22096470 | 0.72 | — | — | |
| SCHEMBL20842563 | 0.72 | — | — | |
| SCHEMBL28723082 | 0.72 | — | — | |
| SCHEMBL477890 | 0.70 | — | — | |
| SCHEMBL477963 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024076670-A2 | TETHERED HETEROCYCLIC INHIBITORS OF KRAS G12C MUTANT PROTEINS AND USES THEREOF | AMGEN INC. (US) | 2024-04-11 | — | — | WO | disclosed |
| US-10651286-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-05-12 | — | — | US | disclosed |
| US-20190305109-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2019-10-03 | — | — | US | disclosed |
| US-10325998-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-06-18 | — | — | US | disclosed |
| US-10269924-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-04-23 | — | — | US | disclosed |
| WO-2019014352-A1 | CARBOXAMIDES AS MODULATORS OF SODIUM CHANNELS | VERTEX PHARMACEUTICALS INCORPORATED (US) | 2019-01-17 | — | — | WO | disclosed |
| US-20170194457-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-07-06 | — | — | US | disclosed |
| US-20170194497-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-07-06 | — | — | US | disclosed |
| US-9633948-B2 | Low energy etch process for nitrogen-containing dielectric layer | GLOBALFOUNDRIES INC. (KY) | 2017-04-25 | — | — | US | disclosed |
| US-9627533-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-04-18 | — | — | US | disclosed |
| CN-103946975-B | Mental retardation engraving method for nitrogenous dielectric layer | 国际商业机器公司 | 2016-08-17 | — | — | CN | disclosed |
| US-20160233335-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | ZEON CORPORATION (JP) | 2016-08-11 | — | — | US | disclosed |
| US-20160111374-A1 | LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER | GLOBALFOUNDRIES U.S. INC. | 2016-04-21 | — | — | US | disclosed |
| US-9190316-B2 | Low energy etch process for nitrogen-containing dielectric layer | GLOBALFOUNDRIES U.S. 2 LLC (US) | 2015-11-17 | — | — | US | disclosed |
| US-8916054-B2 | High fidelity patterning employing a fluorohydrocarbon-containing polymer | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-12-23 | — | — | US | disclosed |
| US-8765613-B2 | High selectivity nitride etch process | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-07-01 | — | — | US | disclosed |
| US-20130105916-A1 | HIGH SELECTIVITY NITRIDE ETCH PROCESS | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130108833-A1 | HIGH FIDELITY PATTERNING EMPLOYING A FLUOROHYDROCARBON-CONTAINING POLYMER | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| WO-2013063182-A1 | HIGH SELECTIVITY NITRIDE ETCH PROCESS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-05-02 | — | — | WO | disclosed |
| US-20130105996-A1 | LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |