⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28050979 | 0.69 | — | — | |
| SCHEMBL20207 | 0.69 | — | — | |
| SCHEMBL27710433 | 0.69 | — | — | |
| SCHEMBL17666012 | 0.67 | — | — | |
| SCHEMBL14891858 | 0.67 | — | — | |
| SCHEMBL12086235 | 0.67 | — | — | |
| SCHEMBL776121 | 0.67 | — | — | |
| SCHEMBL776120 | 0.67 | — | — | |
| SCHEMBL247944 | 0.67 | — | — | |
| SCHEMBL247943 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-106233436-B | Method for increasing etching rate of silicon etching process by etching chamber pretreatment | 国际商业机器公司 | 2020-01-07 | — | — | CN | disclosed |
| US-9711365-B2 | Etch rate enhancement for a silicon etch process through etch chamber pretreatment | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-07-18 | — | — | US | disclosed |
| US-20150318182-A1 | ETCH RATE ENHANCEMENT FOR A SILICON ETCH PROCESS THROUH ETCH CHAMBER PRETREATMENT | ZEON CORPORATION (JP) | 2015-11-05 | — | — | US | disclosed |
| US-8928124-B2 | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-01-06 | — | — | US | disclosed |
| US-8652969-B2 | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-02-18 | — | — | US | disclosed |
| US-20130328173-A1 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE | ZEON CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-20130105947-A1 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |