SCHEMBL1492485

SCHEMBL1492485

C[Ga]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL4585331 0.87
Bromide SCHEMBL4583345 0.87
SCHEMBL1231661 0.87
SCHEMBL10597722 0.58
SCHEMBL5383540 0.58
SCHEMBL23451641 0.58
Bromide SCHEMBL4657347 0.58
Fluoride SCHEMBL4661406 0.58
Hydrochloric Acid SCHEMBL4659692 0.58
SCHEMBL9615101 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 163 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3898887-B1 METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY SHOEI CHEMICAL IND CO (JP) 2024-12-18 EP claimed
CN-113646403-B Method for chemically synthesizing inorganic nano structure by using molten salt 昭荣化学工业株式会社 2024-08-27 CN claimed
CN-113646403-A Method for chemical synthesis of inorganic nanostructures using molten salts 纳米系统公司 2021-11-12 CN claimed
EP-3898887-A1 METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY Nanosys, Inc. (US) 2021-10-27 EP claimed
CN-110670135-B Gallium nitride single crystal material and preparation method thereof 中国科学院福建物质结构研究所 2021-03-05 CN claimed
US-20210013199-A1 INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF TREATING THE FINS TO PREVENT FIN COLLAPSE INTEL CORPORATION (US) 2021-01-14 US claimed
WO-2020163075-A1 METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY NANOSYS, INC. (US) 2020-08-13 WO claimed
CN-110670135-A Gallium nitride single crystal material and preparation method thereof 中国科学院福建物质结构研究所 2020-01-10 CN claimed
CN-108493309-A A kind of nano-pillar ultraviolet LED and the preparation method and application thereof 华南理工大学 2018-09-04 CN claimed
CN-105543969-B A kind of growing method of improvement AlN film crystal quality 南通同方半导体有限公司 2018-05-01 CN claimed
CN-105986243-A Treatment method of MOCVD reactor 中微半导体设备(上海)有限公司 2016-10-05 CN claimed
EP-0206370-B1 PROCESS FOR MAKING A SEMICONDUCTOR DEVICE, INCLUDING THE VAPOUR PHASE DEPOSITION OF CRYSTALLINE LAYERS ON A SUBSTRATE LABORATOIRES D'ELECTRONIQUE PHILIPS (FR) 1990-03-14 EP claimed
JP-62270493-A None JP disclosed
JP-7283437-A None JP disclosed
JP-6283450-A None JP disclosed
CN-120035266-A Back contact photovoltaic cell piece, back contact photovoltaic cell assembly and preparation method 浙江晶科能源有限公司 2025-05-23 CN disclosed
JP-S62270493-A VAPOR GROWTH OF III-V COMPOUND SEMICONDUCTOR NEC CORP 1987-11-24 JP disclosed
EP-0176537-A1 THE PREPARATION OF METAL ALKYLS. SECR DEFENCE BRIT (GB) 1986-04-09 EP disclosed
WO-1985004405-A1 THE PREPARATION OF METAL ALKYLS THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNI (GB) 1985-10-10 WO disclosed
EP-0002383-B1 METHOD AND APPARATUS FOR DEPOSITING SEMICONDUCTOR AND OTHER FILMS PLASMA PHYSICS CORPORATION (US) 1982-07-28 EP disclosed