⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acetaldehyde SCHEMBL27375667 | 0.93 | TSHR (1.00) | — | |
| Acetaldehyde SCHEMBL2338299 | 0.93 | — | — | |
| Acetaldehyde SCHEMBL6747 | 0.93 | — | — | |
| Acetaldehyde SCHEMBL3945841 | 0.93 | — | — | |
| Acetaldehyde SCHEMBL20411618 | 0.93 | — | — | |
| Acetaldehyde SCHEMBL1330497 | 0.93 | — | — | |
| Acetaldehyde SCHEMBL1331732 | 0.93 | — | — | |
| Acetaldehyde SCHEMBL25291303 | 0.86 | — | — | |
| Acetaldehyde SCHEMBL2384792 | 0.86 | — | — | |
| Acetaldehyde SCHEMBL20658915 | 0.86 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2298714-B1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | MITSUBISHI MATERIALS CORP (JP) | 2017-07-05 | — | — | EP | disclosed |
| US-9502636-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9005358-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-20140349139-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349834-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2014-11-27 | — | — | US | disclosed |
| US-8859051-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8790538-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-20130295414-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| US-20110177235-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2011-07-21 | — | — | US | disclosed |
| EP-2343268-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | Mitsubishi Materials Corporation (JP) | 2011-07-13 | — | — | EP | disclosed |
| US-20110098173-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | STMicroelectronics(Tours) SAS (FR) | 2011-04-28 | — | — | US | disclosed |
| EP-2298714-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | Mitsubishi Materials Corporation (JP) | 2011-03-23 | — | — | EP | disclosed |