⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1521711 | 1.00 | — | — | |
| SCHEMBL30785812 | 0.82 | — | — | |
| SCHEMBL30228595 | 0.82 | — | — | |
| SCHEMBL30785811 | 0.82 | — | — | |
| Magnesium SCHEMBL30749762 | 0.82 | — | — | |
| SCHEMBL29369202 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL31474665 | 0.82 | — | — | |
| SCHEMBL30084566 | 0.82 | — | — | |
| SCHEMBL3295 | 0.71 | — | — | |
| SCHEMBL1394588 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 136 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118406963-A | Preparation method of spheroidal graphite cast iron based on casting ladle with low height-diameter ratio | 潍柴动力股份有限公司 | 2024-07-30 | — | — | CN | claimed |
| US-11777003-B2 | Semiconductor structure with wraparound backside amorphous layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-03 | — | — | US | claimed |
| CN-115612892-A | Method for preparing silicon-antimony alloy nanotube | 信阳师范学院 | 2023-01-17 | — | — | CN | claimed |
| US-20220384590-A1 | SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-01 | — | — | US | claimed |
| US-10460801-B2 | Multi-level phase change device | WESTERN DIGITAL TECHNOLOGIES, INC. (US) | 2019-10-29 | — | — | US | claimed |
| CN-105680028-B | A kind of sodium-ion battery negative electrode material silicon antimony alloy film and preparation method thereof | 复旦大学 | 2019-07-05 | — | — | CN | claimed |
| US-10205002-B2 | Method of epitaxial growth shape control for CMOS applications | APPLIED MATERIALS, INC. (US) | 2019-02-12 | — | — | US | claimed |
| US-20180308547-A1 | MULTI-LEVEL PHASE CHANGE DEVICE | JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT | 2018-10-25 | — | — | US | claimed |
| US-10020053-B2 | Multi-level phase change device | HGST Netherlands B.V. (NL) | 2018-07-10 | — | — | US | claimed |
| CN-107937656-A | A kind of inovulant and its preparation process for as cast condition production pearlitic ductile iron | 南京浦江合金材料股份有限公司 | 2018-04-20 | — | — | CN | claimed |
| CN-105680028-A | Negative electrode material Si-Sb alloy thin film for sodium-ion battery and preparation method of negative electrode material Si-Sb alloy thin film | 复旦大学 | 2016-06-15 | — | — | CN | claimed |
| CN-105440689-A | Silicon-antimony composite flame retardant, and preparation method and applications thereof | DONGGUAN CALVIN PLASTIC & TECH CO LTD | 2016-03-30 | — | — | CN | claimed |
| CN-104045854-A | Nano Sb2O3-SiO2 composite aerogel inorganic flame retardant and preparation method thereof | WUDI SINORANCE CHEMICAL CO LTD | 2014-09-17 | — | — | CN | claimed |
| CN-101984512-B | Composite phase change storage material and method for preparing composite phase change storage material film | SHANGHAI INST MICROSYS & INF | 2013-05-22 | — | — | CN | claimed |
| CN-101984512-A | Composite phase change storage material and method for preparing composite phase change storage material film | SHANGHAI INST MICROSYS & INF | 2011-03-09 | — | — | CN | claimed |
| CN-101335258-A | Laser fuse device capable of reprogramming and method for continuously regulating resistance of fuse wire | SHANGHAI INST MICROSYS & INF (CN) | 2008-12-31 | — | — | CN | claimed |
| US-5916386-A | Copper alloy and process for obtaining same | WATERBURY ROLLING MILLS, INC. (US) | 1999-06-29 | — | — | US | claimed |
| EP-0414240-A2 | Process for soldering allowing low ionic contamination without cleaning operation | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1991-02-27 | — | — | EP | claimed |
| CN-1004889-B | Preparation method of medium-low resistance Czochralski silicon single crystal | 浙江大学 | 1989-07-26 | — | — | CN | claimed |
| CN-88102558-A | A kind of preparation method of medium or low resistance czochralski silicon monocrystal | — | 1988-12-14 | — | — | CN | claimed |