⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28657604 | 0.89 | — | — | |
| SCHEMBL12978827 | 0.87 | — | — | |
| SCHEMBL2344 | 0.87 | — | — | |
| SCHEMBL18815988 | 0.87 | — | — | |
| SCHEMBL23004744 | 0.75 | — | — | |
| SCHEMBL2388558 | 0.75 | — | — | |
| Hydrochloric Acid SCHEMBL21981934 | 0.75 | — | — | |
| Phosphine SCHEMBL21811736 | 0.75 | — | — | |
| SCHEMBL6839308 | 0.75 | — | — | |
| SCHEMBL23042743 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 198 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250215558-A1 | METHODS OF FORMING INDIUM MOLYBDENUM OXIDE LAYERS AND ASSOCIATED INDIUM MOLYBDENUM OXIDE LAYERS | ASM IP HOLDING B.V. (NL) | 2025-07-03 | — | — | US | claimed |
| US-20250002839-A1 | Methods, Compositions And Devices For Developing Biophotonic Charge Storage Cells | THE UNIVERSITY OF NORTH CAROLINA AT GREENSBORO | 2025-01-02 | — | — | US | claimed |
| CN-118553795-A | Thin film transistor, method for manufacturing thin film transistor and memory | 北京超弦存储器研究院 | 2024-08-27 | — | — | CN | claimed |
| CN-118019366-B | Laminated solar cell, solar cell and photovoltaic module | 晶科能源(海宁)有限公司 | 2024-07-30 | — | — | CN | claimed |
| CN-115172475-B | Silicon-based double-sided transparent passivation contact heterojunction solar cell and preparation method thereof | 中山大学 | 2024-07-12 | — | — | CN | claimed |
| US-20240168344-A1 | HEAD-MOUNTED DISPLAY DEVICES WITH REDUCED WIRELESS INTERFERENCE BY OPTOELECTRONIC COMPONENTS | META PLATFORMS TECHNOLOGIES, LLC | 2024-05-23 | — | — | US | claimed |
| CN-118019366-A | Laminated solar cell, solar cell and photovoltaic module | 晶科能源(海宁)有限公司 | 2024-05-10 | — | — | CN | claimed |
| US-11925064-B2 | Manufacturing method of display substrate and display device | FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) | 2024-03-05 | — | — | US | claimed |
| WO-2023107268-A2 | METHODS, COMPOSITIONS AND DEVICES FOR DEVELOPING BIOPHOTONIC CHARGE STORAGE CELLS | THE UNIVERSITY OF NORTH CAROLINA AT GREENSBORO (US) | 2023-06-15 | — | — | WO | claimed |
| CN-115172475-A | Silicon-based double-sided transparent passivation contact heterojunction solar cell and preparation method thereof | 中山大学 | 2022-10-11 | — | — | CN | claimed |
| US-20070018180-A1 | Vertical electrode structure of gallium nitride based light emitting diode | LUMENS CO., LTD. (KR) | 2007-01-25 | — | — | US | claimed |
| US-20070018178-A1 | Vertical electrode structure of gallium nitride based light emitting diode | LAI MU-JEN | 2007-01-25 | — | — | US | claimed |
| WO-2006118851-A2 | METHOD OF MAKING SCRATCH RESISTANT COATED GLASS ARTICLE INCLUDING LAYER(S) RESISTANT TO FLUORIDE-BASED ETCHANT(S) | GUARDIAN INDUSTRIES CORP. (US) | 2006-11-09 | — | — | WO | claimed |
| US-20060108598-A1 | Gallium nitride-based light-emitting device | SUPERNOVA OPTOELECTRONICS CORPORATION (TW) | 2006-05-25 | — | — | US | claimed |
| US-20060054907-A1 | Light-emitting device of gallium nitride-based III-V group compound semiconductor | SUPERNOVA OPTOELECTRONICS CORPORATION (TW) | 2006-03-16 | — | — | US | claimed |
| US-20060054898-A1 | Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency | SemiLEDs Optoelectronics Co., Ltd. (TW) | 2006-03-16 | — | — | US | claimed |
| US-20060003545-A1 | Method of making scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s) | GUARDIAN INDUSTRIES CORP. (US) | 2006-01-05 | — | — | US | claimed |
| US-20050280352-A1 | Vertical electrode structure of white light emitting diode | SUPERNOVA OPTOELECTRONICS CORPORATION (TW) | 2005-12-22 | — | — | US | claimed |
| US-20050236632-A1 | Vertical electrode structure of gallium nitride based light emitting diode | SUPERNOVA OPTOELECTRONICS CORPORATION (TW) | 2005-10-27 | — | — | US | claimed |
| US-20050191179-A1 | Structure and manufacturing of gallium nitride light emitting diode | SemiLEDs Optoelectronics Co., Ltd. (TW) | 2005-09-01 | — | — | US | claimed |