⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27985419 | 0.89 | — | — | |
| SCHEMBL738608 | 0.87 | — | — | |
| SCHEMBL29045981 | 0.87 | — | — | |
| SCHEMBL17534843 | 0.87 | — | — | |
| SCHEMBL8077878 | 0.75 | — | — | |
| SCHEMBL29257279 | 0.75 | — | — | |
| SCHEMBL15511801 | 0.75 | — | — | |
| SCHEMBL28564820 | 0.75 | — | — | |
| SCHEMBL25173621 | 0.71 | — | — | |
| SCHEMBL472784 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103855261-A | Semiconductor light emitting element | HIGH POWER OPTO INC | 2014-06-11 | — | — | CN | claimed |
| CN-103489965-A | Light-emitting diode with reflector protection layer | HIGH POWER OPTO INC | 2014-01-01 | — | — | CN | claimed |
| US-9401465-B2 | Light emitting diode having mirror protection layer and method for manufacturing mirror protection layer | HIGH POWER OPTO. INC. (TW) | 2016-07-26 | — | — | US | disclosed |
| US-20160111612-A1 | LIGHT EMITTING DIODE HAVING MIRROR PROTECTION LAYER AND METHOD FOR MANUFACTURING MIRROR PROTECTION LAYER | HIGH POWER OPTO. INC. (TW) | 2016-04-21 | — | — | US | disclosed |
| CN-105489729-A | Light-emitting diode structure with reflector protection layer | HIGH POWER OPTO INC | 2016-04-13 | — | — | CN | disclosed |
| US-20160064602-A1 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF | HIGH POWER OPTO. INC. (TW) | 2016-03-03 | — | — | US | disclosed |
| US-9196798-B2 | Semiconductor light-emitting device and fabricating method thereof | HIGH POWER OPTO. INC. (TW) | 2015-11-24 | — | — | US | disclosed |
| US-20140367726-A1 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF | HIGH POWER OPTO. INC. (TW) | 2014-12-18 | — | — | US | disclosed |
| US-8896007-B2 | Semiconductor light-emitting device and fabricating method thereof | HIGH POWER OPTO, INC. (TW) | 2014-11-25 | — | — | US | disclosed |
| US-8766303-B2 | Light-emitting diode with a mirror protection layer | HIGH POWER OPTO. INC. (TW) | 2014-07-01 | — | — | US | disclosed |
| CN-103855261-A | Semiconductor light emitting element | HIGH POWER OPTO INC | 2014-06-11 | — | — | CN | disclosed |
| CN-103682011-A | Semiconductor light emitting element and method for manufacturing the same | HIGH POWER OPTO INC | 2014-03-26 | — | — | CN | disclosed |
| US-20140070247-A1 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF | HIGH POWER OPTO. INC. (TW) | 2014-03-13 | — | — | US | disclosed |
| US-20140061695-A1 | LIGHT-EMITTING DIODE WITH A MIRROR PROTECTION LAYER | HIGH POWER OPTO. INC. (TW) | 2014-03-06 | — | — | US | disclosed |
| CN-103489965-A | Light-emitting diode with reflector protection layer | HIGH POWER OPTO INC | 2014-01-01 | — | — | CN | disclosed |