SCHEMBL1595569

SCHEMBL1595569

C=C[SiH](CCC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481979 0.85
SCHEMBL8680811 0.81 TSHR (0.39)
SCHEMBL3481423 0.78
SCHEMBL1595968 0.77
SCHEMBL1514223 0.77
SCHEMBL17239114 0.77
SCHEMBL3482452 0.75
SCHEMBL28036010 0.73
SCHEMBL27776525 0.72
SCHEMBL5881449 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116203800-B Photosensitive resin composition containing polysiloxane 上海玟昕科技有限公司 2023-08-25 CN disclosed
CN-116203800-A Photosensitive resin composition containing polysiloxane 上海玟昕科技有限公司 2023-06-02 CN disclosed
EP-1870439-B1 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL CORP (JP) 2018-10-03 EP disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-7919016-B2 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-04-05 US disclosed
US-20100207076-A1 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-08-19 US disclosed
US-7718708-B2 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-05-18 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20070297966-A1 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-12-27 US disclosed
EP-1870439-A2 Conductive tin oxide sol and process for producing same Nissan Chemical Industries, Ltd. (JP) 2007-12-26 EP disclosed
EP-1491503-B1 Metal oxide particle comprising the metals tin, zinc and antimony and process for producing same NISSAN CHEMICAL IND LTD (JP) 2007-09-26 EP disclosed
EP-1589078-B1 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL IND LTD (JP) 2007-01-10 EP disclosed
US-7157024-B2 Metal oxide particle and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-01-02 US disclosed
US-20050239907-A1 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2005-10-27 US disclosed
EP-1589078-A1 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LIMITED (JP) 2005-10-26 EP disclosed
US-20050012078-A1 Metal oxide particle and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2005-01-20 US disclosed