SCHEMBL15978734

SCHEMBL15978734

CCC(C)(C)C(=O)Oc1ccc(OC(=O)C2CCC3OC3C2)cc1

nearest known ligand 0.40

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ HTT P42858 1/20 0.40
▸ KMT2A Q03164 1/20 0.40
▸ SMN1; SMN2 Q16637 1/20 0.40
▸ TDP1 Q9NUW8 1/20 0.40
▸ ELANE P08246 6/20 0.39
▸ ATM Q13315 1/20 0.36
▸ F2 P00734 1/20 0.34
▸ POLB P06746 2/20 0.33
▸ USP2 O75604 1/20 0.33
▸ TP53 P04637 1/20 0.33
▸ TSHR P16473 1/20 0.33
▸ HPGD P15428 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18434906 0.86 HTT (0.37) HTTKMT2ASMN1; SMN2TDP1ELANE
SCHEMBL18356710 0.85 NPC1 (0.40) HTTKMT2ASMN1; SMN2TDP1POLB
SCHEMBL18356798 0.84 MEN1 (0.45) HTTKMT2ASMN1; SMN2POLBTSHR
SCHEMBL22261439 0.82 TDP1 (0.44) HTTKMT2ASMN1; SMN2TDP1ELANE
SCHEMBL14817249 0.82 KMT2A (0.49) HTTKMT2ASMN1; SMN2TDP1ELANE
SCHEMBL14665293 0.81 KMT2A (0.47) HTTKMT2ASMN1; SMN2TDP1ELANE
SCHEMBL15978728 0.78 NPSR1 (0.46) HTTKMT2ASMN1; SMN2TDP1ELANE
SCHEMBL18356937 0.78 KMT2A (0.40) HTTKMT2ASMN1; SMN2TDP1ELANE
SCHEMBL14884055 0.78 ELANE (0.41) ELANEHPGD
SCHEMBL26261372 0.77 ELANE (0.53) HTTKMT2ASMN1; SMN2TDP1ELANE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170005266-A1 SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION FUJIFILM CORPORATION (JP) 2017-01-05 — — US disclosed
US-9400430-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern FUJIFILM CORPORATION (JP) 2016-07-26 — — US disclosed
US-20140242502-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-28 — — US disclosed
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