⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethylamine SCHEMBL8093467 | 0.74 | — | — | |
| 2-Bromoethanol SCHEMBL7949 | 0.72 | — | — | |
| 2-Bromoethanol SCHEMBL8837448 | 0.68 | — | — | |
| 2-Bromoethanol SCHEMBL11788848 | 0.68 | — | — | |
| Bromoethane SCHEMBL3753861 | 0.68 | — | — | |
| 2-Bromoethanol SCHEMBL6985039 | 0.68 | — | — | |
| SCHEMBL637724 | 0.67 | — | — | |
| 2-Bromoethanol SCHEMBL13916048 | 0.65 | — | — | |
| Ethylene Glycol SCHEMBL10389642 | 0.65 | — | — | |
| Dibromomethane SCHEMBL20033 | 0.61 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1590 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120091646-A | Preparation method of Schottky contact for radiation detection based on cadmium telluride monocrystal | 西北工业大学 | 2025-06-03 | — | — | CN | claimed |
| CN-120018618-A | Processing method for cadmium telluride surface plasma etching | 瑞昌中建材光电材料有限公司 | 2025-05-16 | — | — | CN | claimed |
| CN-119985848-A | Tellurium-cadmium-mercury minority carrier lifetime test treatment method | 安徽昱升光电科技有限公司 | 2025-05-13 | — | — | CN | claimed |
| CN-116726883-B | Cave ether modified magnetic ferric oxide nano particle, preparation method and application thereof | 中国农业科学院农产品加工研究所 | 2025-04-18 | — | — | CN | claimed |
| CN-119800512-A | Pretreatment method of tellurium-zinc-cadmium substrate for molecular beam epitaxy | 中国电子科技集团公司第十一研究所 | 2025-04-11 | — | — | CN | claimed |
| CN-119795401-A | Cutting method of semiconductor wafer | 浙江珏芯微电子有限公司 | 2025-04-11 | — | — | CN | claimed |
| CN-119530967-A | Surface reconstruction method and device for tellurium-zinc-cadmium-based tellurium-cadmium-mercury molecular beam epitaxy | 中国电子科技集团公司第十一研究所 | 2025-02-28 | — | — | CN | claimed |
| CN-119492968-A | PN junction material carrier concentration and mobility testing method and application | 北京智创芯源科技有限公司 | 2025-02-21 | — | — | CN | claimed |
| CN-119170693-A | Pixel type CZT detector and passivation process thereof | 安徽先导先进科技有限公司 | 2024-12-20 | — | — | CN | claimed |
| CN-118448516-B | Multi-piece tellurium-zinc-cadmium composite substrate, and preparation method and application thereof | 北京智创芯源科技有限公司 | 2024-12-03 | — | — | CN | claimed |
| EP-0366886-A1 | Passivated compound semiconductor structure | TEXAS INSTRUMENTS INCORPORATED (US) | 1990-05-09 | — | — | EP | claimed |
| US-4873198-A | PREHEAT TREATMENT OF CADMIUM-TELLURIDE INTERMETALLIC | AMETEK, INC. (US) | 1989-10-10 | — | — | US | claimed |
| US-4865656-A | Process for surface passivation of an indium phosphide substrate and product obtained | ETABLISSEMENT PUBLIC A CARACTERE SCIENTIFIQUE (FR) | 1989-09-12 | — | — | US | claimed |
| US-4755858-A | Field effect transistor | ITT GALLIUM ARSENIDE TECHNOLOGY CENTER (US) | 1988-07-05 | — | — | US | claimed |
| US-4681621-A | Herbicidal 2-(2-substituted benzoyl)-1,3-cyclopentanediones | STAUFFER CHEMICAL COMPANY (US) | 1987-07-21 | — | — | US | claimed |
| US-4628124-A | Tetrabromobisphenol-A process | ETHYL CORPORATION (US) | 1986-12-09 | — | — | US | claimed |
| US-4436580-A | Method of preparing a mercury cadium telluride substrate for passivation and processing | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1984-03-13 | — | — | US | claimed |
| US-4380490-A | STRIPPING, SILICON | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1983-04-19 | — | — | US | claimed |
| US-4098031-A | Method for lapping semiconductor material | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1978-07-04 | — | — | US | claimed |
| US-3969164-A | Native oxide technique for preparing clean substrate surfaces | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1976-07-13 | — | — | US | claimed |