Known targets — ChEMBL curated mechanism
ACHEADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3APH1AAPH1BCHRM2CHRM3EZH2GRIN2AHTR1AHTR1BHTR1DHTR1FHTR3ANCSTNP2RY12PSEN1PSEN2PSENENSIGMAR1SLC6A2SLC6A3SLC6A4
The experimentally established mechanism targets of Methyl Alcohol. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methyl Alcohol SCHEMBL28999943 | 1.00 | — | — | |
| Methyl Alcohol SCHEMBL10830331 | 1.00 | — | — | |
| Methyl Alcohol SCHEMBL29123036 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL10883200 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL29123046 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL8413045 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL5177517 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL9306163 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL9766433 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL28474201 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1165 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120018618-A | Processing method for cadmium telluride surface plasma etching | 瑞昌中建材光电材料有限公司 | 2025-05-16 | — | — | CN | claimed |
| CN-118448516-B | Multi-piece tellurium-zinc-cadmium composite substrate, and preparation method and application thereof | 北京智创芯源科技有限公司 | 2024-12-03 | — | — | CN | claimed |
| CN-118448516-A | Multi-piece tellurium-zinc-cadmium composite substrate, and preparation method and application thereof | 北京智创芯源科技有限公司 | 2024-08-06 | — | — | CN | claimed |
| CN-118311326-A | Resistivity measuring method for tellurium-zinc-cadmium crystal bar | 安徽光智科技有限公司 | 2024-07-09 | — | — | CN | claimed |
| CN-118291140-A | Surface corrosive agent for CdZnTeSe wafer | 电子科技大学 | 2024-07-05 | — | — | CN | claimed |
| CN-116199252-B | Modified Cu2GeS3Single particle powder, preparation method and application thereof, single particle solar cell and preparation method thereof | 厦门大学 | 2024-06-07 | — | — | CN | claimed |
| CN-118136727-A | Improved tellurium-cadmium-mercury APD passivation layer, preparation method and application thereof | 昆明物理研究所 | 2024-06-04 | — | — | CN | claimed |
| CN-113151901-B | CZT crystal and post-treatment method thereof, CZT wafer, nuclear radiation detection device and preparation method thereof | 中广核工程有限公司 | 2024-05-24 | — | — | CN | claimed |
| CN-117720591-A | Synthesis method of 14-methyl ether epirubicin | 浙江亚瑟医药有限公司 | 2024-03-19 | — | — | CN | claimed |
| CN-117448970-A | Corrosion process of tellurium-zinc-cadmium crystal | 安徽光智科技有限公司 | 2024-01-26 | — | — | CN | claimed |
| US-4973379-A | Method of aerosol jet etching | BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) | 1990-11-27 | — | — | US | claimed |
| EP-0366886-A1 | Passivated compound semiconductor structure | TEXAS INSTRUMENTS INCORPORATED (US) | 1990-05-09 | — | — | EP | claimed |
| US-4873198-A | PREHEAT TREATMENT OF CADMIUM-TELLURIDE INTERMETALLIC | AMETEK, INC. (US) | 1989-10-10 | — | — | US | claimed |
| US-4865656-A | Process for surface passivation of an indium phosphide substrate and product obtained | ETABLISSEMENT PUBLIC A CARACTERE SCIENTIFIQUE (FR) | 1989-09-12 | — | — | US | claimed |
| US-4755858-A | Field effect transistor | ITT GALLIUM ARSENIDE TECHNOLOGY CENTER (US) | 1988-07-05 | — | — | US | claimed |
| US-4628124-A | Tetrabromobisphenol-A process | ETHYL CORPORATION (US) | 1986-12-09 | — | — | US | claimed |
| US-4436580-A | Method of preparing a mercury cadium telluride substrate for passivation and processing | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1984-03-13 | — | — | US | claimed |
| US-4380490-A | STRIPPING, SILICON | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1983-04-19 | — | — | US | claimed |
| US-4098031-A | Method for lapping semiconductor material | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1978-07-04 | — | — | US | claimed |
| US-3969164-A | Native oxide technique for preparing clean substrate surfaces | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1976-07-13 | — | — | US | claimed |