SCHEMBL1608855

SCHEMBL1608855

CCOC(CCCO[SiH3])(OC)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1609070 0.86
SCHEMBL28411953 0.85
SCHEMBL1607972 0.84
SCHEMBL28418735 0.80
SCHEMBL28714181 0.79
SCHEMBL1608838 0.75
SCHEMBL28679530 0.72
SCHEMBL27458675 0.70 TSHR (0.33)
SCHEMBL10592233 0.70 CYP4F2 (0.37)
SCHEMBL1066711 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 88 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12473405-B2 Polyorganosiloxane, polyorganosiloxane composition, cured product, polyorganosiloxane-containing electrolytic solution for electrolytic capacitor, and electrolytic capacitor using same MITSUBISHI CHEMICAL CORPORATION (JP) 2025-11-18 US disclosed
WO-2025053280-A1 OPTICAL WAVEGUIDE AND OPTICAL MEMBER HAVING OPTICAL WAVEGUIDE 三菱ケミカル株式会社 2025-03-13 WO disclosed
WO-2025053279-A1 ORGANOPOLYSILOXANE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION, CURED PRODUCT THEREOF, ORGANOPOLYSILOXANE FOR NEAR-INFRARED OPTICAL WAVEGUIDE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION FOR NEAR-INFRARED OPTICAL WAVEGUIDE, CURED PRODUCT FOR NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL TRANSMISSION MEMBER, AND NEAR-INFRARED OPTICAL WAVEGUIDE PRODUCTION METHOD 三菱ケミカル株式会社 2025-03-13 WO disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
US-20230250237-A1 POLYORGANOSILOXANE, POLYORGANOSILOXANE COMPOSITION, CURED PRODUCT, POLYORGANOSILOXANE-CONTAINING ELECTROLYTIC SOLUTION FOR ELECTROLYTIC CAPACITOR, AND ELECTROLYTIC CAPACITOR USING SAME MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-10 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
US-11608415-B2 Polyorganosiloxane, polyorganosiloxane composition, cured product, polyorganosiloxane-containing electrolytic solution for electrolytic capacitor, and electrolytic capacitor using same MITSUBISHI CHEMICAL CORPORATION (JP) 2023-03-21 US disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
US-11413682-B2 Method for producing surface-modified metal oxide fine particle, method for producing improved metal oxide fine particles, surface-modified metal oxide fine particles, and metal oxide fine particle dispersion liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-16 US disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 US disclosed
EP-2131423-A1 NEGATIVE ELECTRODE BASE MEMBER Tokyo Ohka Kogyo Co., Ltd. (JP) 2009-12-09 EP disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 US disclosed
US-20080318165-A1 Composition For Forming Antireflective Film And Wiring Forming Method Using Same TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-25 US disclosed
US-7238462-B2 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2007-07-03 US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 US disclosed
US-20060141693-A1 Semiconductor multilayer interconnection forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-29 US disclosed
EP-1566836-A1 SEMICONDUCTOR MULTILAYER INTERCONNECTION FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-24 EP disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed