⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7258925 | 0.95 | TSHR (0.54) | — | |
| SCHEMBL7898 | 0.95 | — | — | |
| SCHEMBL28163723 | 0.92 | — | — | |
| SCHEMBL27852089 | 0.91 | — | — | |
| Ammonia Solution, Strong SCHEMBL20639246 | 0.91 | — | — | |
| SCHEMBL28205496 | 0.91 | — | — | |
| SCHEMBL28803623 | 0.91 | — | — | |
| Water SCHEMBL9312726 | 0.91 | — | — | |
| Hydrochloric Acid SCHEMBL3403342 | 0.91 | — | — | |
| Hydrazine SCHEMBL14118554 | 0.91 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1500978-B1 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2014-04-23 | — | — | EP | disclosed |
| US-8481161-B2 | Functionalized metal nanoparticle and method for formation of conductive pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-07-09 | — | — | US | disclosed |
| CN-101563786-B | Electronic device module comprising polyolefin copolymer | DOW GLOBAL TECHNOLOGIES INC | 2011-08-17 | — | — | CN | disclosed |
| CN-101517750-B | Electronic device module comprising ethylene multi-block copolymer | DOW GLOBAL TECHNOLOGIES INC | 2011-06-29 | — | — | CN | disclosed |
| US-7923110-B2 | Metal nanoparticle having a self-assembled monolayer on its surface, and formation of conductive pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-04-12 | — | — | US | disclosed |
| CN-1573543-B | Photosensitive metal nanoparticle and method of forming conductive pattern using the same | SAMSUNG ELECTRONICS CO LTD | 2010-05-12 | — | — | CN | disclosed |
| CN-101563786-A | Electronic device module comprising polyolefin copolymer | DOW GLOBAL TECHNOLOGIES INC (US) | 2009-10-21 | — | — | CN | disclosed |
| CN-101517750-A | Electronic device module comprising ethylene multi-block copolymer | DOW GLOBAL TECHNOLOGIES INC (US) | 2009-08-26 | — | — | CN | disclosed |
| US-7473513-B1 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-01-06 | — | — | US | disclosed |
| US-20080311513-A1 | PHOTOSENSITIVE METAL NANOPARTICLE AND METHOD OF FORMING CONDUCTIVE PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-12-18 | — | — | US | disclosed |
| US-20080020317-A1 | Novel metal nanoparticle and formation of conductive pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-24 | — | — | US | disclosed |
| US-20080003363-A1 | Novel metal nanoparticle and method for formation of conductive pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-03 | — | — | US | disclosed |
| US-7166412-B2 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-01-23 | — | — | US | disclosed |
| CN-1573543-A | Photosensitive metal nanoparticle and method of forming conductive pattern using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2005-02-02 | — | — | CN | disclosed |
| EP-1500978-A2 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same | Samsung Electronics Co., Ltd. (KR) | 2005-01-26 | — | — | EP | disclosed |
| US-20040253536-A1 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-12-16 | — | — | US | disclosed |
| US-6774036-B2 | Integrated circuit trenched features and method of producing same | GOLDSTEIN AVERY N (US) | 2004-08-10 | — | — | US | disclosed |
| US-20040023488-A1 | Integrated circuit trenched features and method of producing same | GOLDSTEIN AVERY N (US) | 2004-02-05 | — | — | US | disclosed |
| US-20020006723-A1 | Integrated circuit trenched features and method of producing same | NANOSPIN SOLUTIONS | 2002-01-17 | — | — | US | disclosed |