⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27940228 | 0.97 | — | — | |
| SCHEMBL28227557 | 0.97 | PTPN1 (0.32) | — | |
| SCHEMBL30661142 | 0.97 | PTPN1 (0.32) | — | |
| SCHEMBL15533446 | 0.97 | — | — | |
| SCHEMBL407583 | 0.97 | — | — | |
| SCHEMBL23828665 | 0.94 | PTPN1 (0.31) | — | |
| SCHEMBL10395040 | 0.94 | PTPN1 (0.31) | — | |
| SCHEMBL1628589 | 0.94 | — | — | |
| SCHEMBL31211712 | 0.94 | PTPN1 (0.31) | — | |
| Potassium SCHEMBL31591227 | 0.94 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119751739-A | Preparation method and application of positive electrode binder | 盛虹动能科技(泰州)有限公司 | 2025-04-04 | — | — | CN | claimed |
| WO-2025097530-A1 | HIGH-PURITY LA(IPRCP)3, AND PREPARATION METHOD THEREFOR AND USE THEREOF | 江苏南大光电材料股份有限公司 | 2025-05-15 | — | — | WO | disclosed |
| CN-119751739-A | Preparation method and application of positive electrode binder | 盛虹动能科技(泰州)有限公司 | 2025-04-04 | — | — | CN | disclosed |
| CN-117362357-A | High purity La (iPrCp) 3 Preparation method and application thereof | 江苏南大光电材料股份有限公司 | 2024-01-09 | — | — | CN | disclosed |
| CN-114667290-A | Yttrium or lanthanide metal precursor compounds, film-forming compositions containing the same, and methods of forming yttrium or lanthanide metal-containing films using the same | UP化学株式会社 | 2022-06-24 | — | — | CN | disclosed |
| EP-1556395-B1 | METHODS FOR MAKING METALLOCENE COMPOUNDS | PRAXAIR TECHNOLOGY INC (US) | 2018-09-12 | — | — | EP | disclosed |
| US-9908819-B1 | Printing method for production a ceramic green body | WZR ceramic solutions GmbH (DE) | 2018-03-06 | — | — | US | disclosed |
| EP-2807174-B1 | MOLYBDENUM ALLYL COMPLEXES AND USE THEREOF IN THIN FILM DEPOSITION | SIGMA ALDRICH CO LLC (US) | 2016-03-30 | — | — | EP | disclosed |
| CN-104136448-B | Molybdenum allyl complex and its purposes in thin film deposition | SIGMA-ALDRICH Co.,LLC (US) | 2015-12-02 | — | — | CN | disclosed |
| US-9175023-B2 | Molybdenum allyl complexes and use thereof in thin film deposition | SIGMA-ALDRICH CO. LLC (US) | 2015-11-03 | — | — | US | disclosed |
| US-20040126485-A1 | Deposition processes using Group 8 (VIII) metallocene precursors | PRAXAIR TECHNOLOGY, INC. | 2004-07-01 | — | — | US | disclosed |
| US-20040127732-A1 | Methods for making metallocene compounds | PRAXAIR TECHNOLOGY, INC. | 2004-07-01 | — | — | US | disclosed |
| WO-2004042354-A2 | METHODS FOR MAKING METALLOCENE COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2004-05-21 | — | — | WO | disclosed |
| WO-2004041753-A2 | DEPOSITION PROCESSES USING GROUP 8 (VIII) METALLOCENE PRECURSORS | PRAXAIR TECHNOLOGY, INC. (US) | 2004-05-21 | — | — | WO | disclosed |
| WO-2004041832-A2 | ASYMMETRIC GROUP 8 (VIII) METALLOCENE COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2004-05-21 | — | — | WO | disclosed |
| US-20040010158-A1 | Method for producing organometallic compounds | PRAXAIR TECHNOLOGY, INC. | 2004-01-15 | — | — | US | disclosed |
| WO-2003106011-A2 | A METHOD FOR PRODUCING ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2003-12-24 | — | — | WO | disclosed |
| JP-2003104994-A | METHOD OF PRODUCING BIS (ALKYLCYCLOPENTADIENYL) RUTHENIUM COMPLEX, METHOD OF PURIFYING USED COMPLEX AND METHOD OF REUSING THE SAME | MITSUBISHI MATERIALS CORP | 2003-04-09 | — | — | JP | disclosed |
| US-4992305-A | Decomposign organometallic compound by contact with heated substrate | GEORGIA TECH RESEARCH CORPORATION (US) | 1991-02-12 | — | — | US | disclosed |
| US-4882206-A | Chemical vapor deposition of group IIIB metals | GEORGIA TECH RESEARCH CORPORATION (US) | 1989-11-21 | — | — | US | disclosed |