⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9214 | 0.43 | — | — | |
| SCHEMBL11231382 | 0.43 | — | — | |
| Nitrous Oxide SCHEMBL1332593 | 0.43 | — | — | |
| SCHEMBL7759796 | 0.43 | — | — | |
| SCHEMBL12545155 | 0.43 | — | — | |
| SCHEMBL2037112 | 0.41 | — | — | |
| SCHEMBL31695398 | 0.41 | — | — | |
| SCHEMBL1841057 | 0.41 | — | — | |
| SCHEMBL4869614 | 0.41 | — | — | |
| SCHEMBL6418527 | 0.35 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024115410-A1 | CARRIER COMPRISING A CHARGE-TRAPPING LAYER, COMPOSITE SUBSTRATE COMPRISING SUCH A CARRIER AND ASSOCIATED PRODUCTION METHODS | SOITEC (FR) | 2024-06-06 | — | — | WO | disclosed |
| WO-2024115411-A1 | CARRIER COMPRISING A CHARGE-TRAPPING LAYER, COMPOSITE SUBSTRATE COMPRISING SUCH A CARRIER AND ASSOCIATED PRODUCTION METHODS | SOITEC (FR) | 2024-06-06 | — | — | WO | disclosed |
| WO-2024115414-A1 | CARRIER COMPRISING A CHARGE-TRAPPING LAYER, COMPOSITE SUBSTRATE COMPRISING SUCH A CARRIER AND ASSOCIATED PRODUCTION METHODS | SOITEC (FR) | 2024-06-06 | — | — | WO | disclosed |
| CN-111554695-A | Display substrate, manufacturing method thereof and display device | 京东方科技集团股份有限公司 | 2020-08-18 | — | — | CN | disclosed |
| US-8324699-B2 | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2012-12-04 | — | — | US | disclosed |
| US-20110089425-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2011-04-21 | — | — | US | disclosed |
| US-7855153-B2 | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-12-21 | — | — | US | disclosed |
| CN-101425453-B | Method for forming alpha-tantalum layer, MIM capacitor and method for forming MIM capacitor | TAIWAN SEMICONDUCTOR MFG | 2010-10-13 | — | — | CN | disclosed |
| US-20090203174-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2009-08-13 | — | — | US | disclosed |
| CN-101425453-A | Method for forming alpha-tantalum layer, MIM capacitor and method for forming MIM capacitor | TAIWAN SEMICONDUCTOR MFG (CN) | 2009-05-06 | — | — | CN | disclosed |
| EP-0794460-A2 | A process for device fabrication and an anti-reflective coating for use therein | LUCENT TECHNOLOGIES INC. (US) | 1997-09-10 | — | — | EP | disclosed |