SCHEMBL16376307

SCHEMBL16376307

C=C(NC(C)C)C1CCN(C(=O)OC(C)(C)C)CC1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HPGD P15428 1/20 0.58
RECQL P46063 1/20 0.52
EPHX1 P07099 1/20 0.52
PTPN2 P17706 1/20 0.51
PTPN1 P18031 1/20 0.51
PTPN6 P29350 1/20 0.51
NPC1 O15118 2/20 0.50
RAB9A P51151 2/20 0.50
ALDH1A1 P00352 1/20 0.48
MAPT P10636 1/20 0.48
MAPK1 P28482 1/20 0.48
HTT P42858 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
ABL1 P00519 1/20 0.47
RIN1 Q13671 1/20 0.47
KMT2A Q03164 2/20 0.47
SMN1; SMN2 Q16637 2/20 0.47
MEN1 O00255 1/20 0.47
STS P08842 5/20 0.45
HSD17B10 Q99714 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23674877 0.88 HPGD (0.61) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL15132685 0.86 KMT2A (0.55) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL2146474 0.81 HPGD (0.57) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL22719731 0.80 HPGD (0.62) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL17150677 0.80 HPGD (0.62) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL16291661 0.80 HPGD (0.62) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL618966 0.78 EPHX1 (0.66) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL16230337 0.78 HPGD (0.60) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL888755 0.78 HPGD (0.60) HPGDRECQLEPHX1PTPN2PTPN1
SCHEMBL3923396 0.78 HPGD (0.54) HPGDRECQLEPHX1PTPN2PTPN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9557641-B2 Photoresist composition, resist pattern-forming method, acid diffusion control agent, and compound JSR CORPORATION (JP) 2017-01-31 US disclosed
US-9557641-B2 Photoresist composition, resist pattern-forming method, acid diffusion control agent, and compound JSR CORPORATION (JP) 2017-01-31 US disclosed
US-20150309406-A9 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, AND COMPOUND JSR CORPORATION (JP) 2015-10-29 US disclosed
US-20150309406-A9 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, AND COMPOUND JSR CORPORATION (JP) 2015-10-29 US disclosed
US-20150004544-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, AND COMPOUND JSR CORPORATION (JP) 2015-01-01 US disclosed
US-20150004544-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, AND COMPOUND JSR CORPORATION (JP) 2015-01-01 US disclosed