SCHEMBL16608971

SCHEMBL16608971

CCCCCCN(C)CCCCS(=O)(=O)O

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ S1PR2 O95136 1/20 0.52
▸ S1PR1 P21453 1/20 0.52
▸ S1PR3 Q99500 1/20 0.52
▸ S1PR5 Q9H228 1/20 0.52
▸ EPHX2 P34913 1/20 0.46
▸ GGPS1 O95749 4/20 0.44
▸ KDM5A P29375 2/20 0.44
▸ KDM4C Q9H3R0 2/20 0.44
▸ PHF8 Q9UPP1 1/20 0.44
▸ FAAH O00519 2/20 0.43
▸ FDPS P14324 1/20 0.43
▸ AGTR1 P30556 1/20 0.43
▸ OPRM1 P35372 1/20 0.43
▸ PDE3A Q14432 1/20 0.43
▸ DNM1 Q05193 3/20 0.43
▸ KDM5C P41229 1/20 0.41
▸ KDM5B Q9UGL1 1/20 0.41
▸ THRA P10827 1/20 0.41
▸ THRB P10828 1/20 0.41
▸ CES1 P23141 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31267553 1.00 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL28485251 1.00 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL23001183 1.00 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL23001134 1.00 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL18117462 0.98 S1PR2 (0.48) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL13155350 0.96 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL16311730 0.96 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL7246353 0.96 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL17817349 0.96 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2
SCHEMBL11553105 0.96 S1PR2 (0.52) S1PR2S1PR1S1PR3S1PR5EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160018732-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, RESIST-COATED MASK BLANK, PHOTOMASK AND PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-21 — — US disclosed
US-20150093692-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM USED THEREFOR, AND ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THE SAMEDEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2015-04-02 — — US disclosed
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