SCHEMBL16731971

SCHEMBL16731971

CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].[O-2].[V+5]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6097230 1.00
SCHEMBL6456965 0.94 TSHR (0.30)
SCHEMBL843249 0.80 TSHR (0.30)
SCHEMBL21404983 0.80 TSHR (0.30)
SCHEMBL5551379 0.80 TSHR (0.30)
SCHEMBL25300512 0.80 TSHR (0.30)
SCHEMBL21405223 0.80 TSHR (0.30)
SCHEMBL20490117 0.80 TSHR (0.30)
Zinc Ion SCHEMBL25253083 0.80 TSHR (0.30)
SCHEMBL16970939 0.80 TSHR (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3076469-B1 BATTERY AND POSITIVE ELETRODE MATERIAL PANASONIC IP MAN CO LTD (JP) 2017-11-22 EP disclosed
US-9714262-B2 Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell HITACHI CHEMICAL COMPANY, LTD. (JP) 2017-07-25 US disclosed
US-20160293958-A1 BATTERY AND POSITIVE ELECTRODE MATERIAL PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (JP) 2016-10-06 US disclosed
EP-3076469-A2 BATTERY AND POSITIVE ELETRODE MATERIAL Panasonic Intellectual Property Management Co., Ltd. (JP) 2016-10-05 EP disclosed
US-20160211389-A1 COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOV OLTAIC CELL ELEMENT, METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL HITACHI CHEMICAL COMPANY, LTD. (JP) 2016-07-21 US disclosed
US-20150228812-A1 COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOLOLTAIC CELL ELEMENT, METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL HITACHI CHEMICAL COMPANY, LTD. (JP) 2015-08-13 US disclosed
US-20150166582-A1 COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOVOLTAIC CELL ELEMENT, METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT AND PHOTOVOLTAIC CELL HITACHI CHEMICAL COMPANY, LTD. a corporation 2015-06-18 US disclosed
EP-2876670-A1 COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, SOLAR CELL ELEMENT, PRODUCTION METHOD FOR SOLAR CELL ELEMENT, AND SOLAR CELL Hitachi Chemical Co., Ltd. (JP) 2015-05-27 EP disclosed