Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1679364 | 0.67 | TSHR (0.36) | TSHRTDP1 | |
| SCHEMBL186082 | 0.67 | TSHR (0.36) | TSHRTDP1 | |
| SCHEMBL1252471 | 0.67 | TSHR (0.36) | TSHRTDP1 | |
| SCHEMBL1679016 | 0.67 | — | — | |
| SCHEMBL1678183 | 0.67 | — | — | |
| SCHEMBL1679218 | 0.61 | — | — | |
| SCHEMBL7572566 | 0.61 | — | — | |
| SCHEMBL10447400 | 0.59 | — | — | |
| SCHEMBL1678357 | 0.57 | — | — | |
| SCHEMBL9713097 | 0.56 | TSHR (0.33) | TSHRTDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11081343-B2 | Sub-stoichiometric metal-oxide thin films | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2021-08-03 | — | — | US | claimed |
| US-20210020427-A1 | SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2021-01-21 | — | — | US | claimed |
| US-20110163415-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2011-07-07 | — | — | US | claimed |
| US-20050139965-A1 | Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same | HYNIX SEMICONDUCTOR INC. (KR) | 2005-06-30 | — | — | US | claimed |
| US-11646199-B2 | Sub-stoichiometric metal-oxide thin films | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2023-05-09 | — | — | US | disclosed |
| US-11362274-B2 | Laterally switching cell having sub-stoichiometric metal oxide active layer | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2022-06-14 | — | — | US | disclosed |
| US-11081343-B2 | Sub-stoichiometric metal-oxide thin films | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2021-08-03 | — | — | US | disclosed |
| US-20210217953-A1 | LATERALLY SWITCHING CELL HAVING SUB-STOICHIOMETRIC METAL OXIDE ACTIVE LAYER | ULVAC, INC. (JP) | 2021-07-15 | — | — | US | disclosed |
| US-20210020426-A1 | LIGAND SELECTION FOR TERNARY OXIDE THIN FILMS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2021-01-21 | — | — | US | disclosed |
| US-20210020427-A1 | SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2021-01-21 | — | — | US | disclosed |
| US-20110163415-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2011-07-07 | — | — | US | disclosed |
| US-7923573-B2 | Benzene compound having 2 or more substituents | DAIICHI SANKYO COMPANY, LIMITED (JP) | 2011-04-12 | — | — | US | disclosed |
| EP-1806332-A1 | BENZENE COMPOUND HAVING 2 OR MORE SUBSTITUENTS | Daiichi Sankyo Company, Limited (JP) | 2007-07-11 | — | — | EP | disclosed |
| EP-1764075-A1 | TISSUE FACTOR PRODUCTION INHIBITOR | Sankyo Company, Limited (JP) | 2007-03-21 | — | — | EP | disclosed |
| EP-1678353-A2 | ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC | Aviza Technology, Inc. (US) | 2006-07-12 | — | — | EP | disclosed |
| US-20050266700-A1 | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices | JURSICH GREGORY M | 2005-12-01 | — | — | US | disclosed |
| WO-2005034196-A9 | ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC | AVIZA TECH INC (US) | 2005-07-28 | — | — | WO | disclosed |
| US-20050139965-A1 | Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same | HYNIX SEMICONDUCTOR INC. (KR) | 2005-06-30 | — | — | US | disclosed |
| US-20050126586-A1 | Method of cleaning semiconductor device fabrication apparatus | SAMSUNG ELECTRONICS., LTD. (KR) | 2005-06-16 | — | — | US | disclosed |
| WO-2005034196-A2 | ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC | AVIZA TECHNOLOGY, INC. (US) | 2005-04-14 | — | — | WO | disclosed |